@article{84103fbbb8014c4d9356efa2ff3c314d,
title = "High-performance AlGaN/GaN schottky diodes with an AlGaN/AlN buffer layer",
abstract = "High-performance AlGaN/GaN Schottky barrier diodes are fabricated on a composite AlGaN/AlN buffer layer with low screw-type and high edge-type dislocation densities. Without edge termination, the devices with 30-m anode-to-cathode spacing exhibit a high breakdown voltage VB of 3489 V, a low leakage current IR of less than 0.2 A at 2000 V, and a low specific on-resistance R of 7.9 cm2, resulting in a figure of merit VB 2/R on as high as 1.54 GW/cm2. Their switching characteristics as revealed by the reverse-recovery transient waveform exhibit a short reverse-recovery time of 17 ns.",
keywords = "AlGaN/AlN buffer, AlGaN/GaN, Schottky barrier diodes (SBDs)",
author = "Lee, {Geng Yen} and Liu, {Hsueh Hsing} and Chyi, {Jen Inn}",
note = "Funding Information: Manuscript received July 14, 2011; revised August 1, 2011; accepted August 6, 2011. Date of publication September 18, 2011; date of current version October 26, 2011. This work was supported in part by the National Science Council of Taiwan under Contract NSC 96-2628-E-008-072-MY3 and in part by Tekcore Company, Ltd. The review of this letter was arranged by Editor J. A. del Alamo.",
year = "2011",
month = nov,
doi = "10.1109/LED.2011.2164610",
language = "???core.languages.en_GB???",
volume = "32",
pages = "1519--1521",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
number = "11",
}