High-performance AlGaN/GaN schottky diodes with an AlGaN/AlN buffer layer

Geng Yen Lee, Hsueh Hsing Liu, Jen Inn Chyi

研究成果: 雜誌貢獻期刊論文同行評審

54 引文 斯高帕斯(Scopus)

摘要

High-performance AlGaN/GaN Schottky barrier diodes are fabricated on a composite AlGaN/AlN buffer layer with low screw-type and high edge-type dislocation densities. Without edge termination, the devices with 30-m anode-to-cathode spacing exhibit a high breakdown voltage VB of 3489 V, a low leakage current IR of less than 0.2 A at 2000 V, and a low specific on-resistance R of 7.9 cm2, resulting in a figure of merit VB 2/R on as high as 1.54 GW/cm2. Their switching characteristics as revealed by the reverse-recovery transient waveform exhibit a short reverse-recovery time of 17 ns.

原文???core.languages.en_GB???
文章編號6022747
頁(從 - 到)1519-1521
頁數3
期刊IEEE Electron Device Letters
32
發行號11
DOIs
出版狀態已出版 - 11月 2011

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