High peak-to-valley current ratio In0.3Ga0.7As/In0.29Al0.7, As resonant tunneling diodes grown on GaAs

H. P. Hwang; J. L. Shieh; R. M. Lin; J. I. Chyi; S. L. Tu; C. K. Peng; S. J. Yang

doi:10.1109/EDMS.1994.771193

High peak-to-valley current ratio In_0.3Ga_0.7As/In_0.29Al_0.7, As resonant tunneling diodes grown on GaAs

H. P. Hwang, J. L. Shieh, R. M. Lin, J. I. Chyi, S. L. Tu, C. K. Peng, S. J. Yang

研究成果: 會議貢獻類型 › 會議論文 › 同行評審

摘要

We have investigated the current-voltage characteristics of In_0.3Ga_0.7As/In_0.29Al_0.71As double-barrier resonant tunneling diodes grown on GaAs substrates. These devices exhibit peak-to-valley current ratios as high as 7.6 and 19.5 at room temperature and 77 K, respectively. Two negative differential resistance regions are also observed for devices with larger well width. These results have shown that high quality epilayer can be obtained despite the large lattice mismatch between In_0.3Ga_0.7As and GaAs.

原文	???core.languages.en_GB???
DOIs	https://doi.org/10.1109/EDMS.1994.771193
出版狀態	已出版 - 1994
事件	1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan 持續時間: 12 7月 1994 → 15 7月 1994

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???event.eventtypes.event.conference???	1994 International Electron Devices and Materials Symposium, EDMS 1994
國家/地區	Taiwan
城市	Hsinchu
期間	12/07/94 → 15/07/94

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10.1109/EDMS.1994.771193

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title = "High peak-to-valley current ratio In0.3Ga0.7As/In0.29Al0.7, As resonant tunneling diodes grown on GaAs",

abstract = "We have investigated the current-voltage characteristics of In0.3Ga0.7As/In0.29Al0.71As double-barrier resonant tunneling diodes grown on GaAs substrates. These devices exhibit peak-to-valley current ratios as high as 7.6 and 19.5 at room temperature and 77 K, respectively. Two negative differential resistance regions are also observed for devices with larger well width. These results have shown that high quality epilayer can be obtained despite the large lattice mismatch between In0.3Ga0.7As and GaAs.",

author = "Hwang, {H. P.} and Shieh, {J. L.} and Lin, {R. M.} and Chyi, {J. I.} and Tu, {S. L.} and Peng, {C. K.} and Yang, {S. J.}",

note = "Publisher Copyright: {\textcopyright} 1994 IEEE.; 1994 International Electron Devices and Materials Symposium, EDMS 1994 ; Conference date: 12-07-1994 Through 15-07-1994",

year = "1994",

doi = "10.1109/EDMS.1994.771193",

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TY - CONF

T1 - High peak-to-valley current ratio In0.3Ga0.7As/In0.29Al0.7, As resonant tunneling diodes grown on GaAs

AU - Hwang, H. P.

AU - Shieh, J. L.

AU - Lin, R. M.

AU - Chyi, J. I.

AU - Tu, S. L.

AU - Peng, C. K.

AU - Yang, S. J.

PY - 1994

Y1 - 1994

N2 - We have investigated the current-voltage characteristics of In0.3Ga0.7As/In0.29Al0.71As double-barrier resonant tunneling diodes grown on GaAs substrates. These devices exhibit peak-to-valley current ratios as high as 7.6 and 19.5 at room temperature and 77 K, respectively. Two negative differential resistance regions are also observed for devices with larger well width. These results have shown that high quality epilayer can be obtained despite the large lattice mismatch between In0.3Ga0.7As and GaAs.

AB - We have investigated the current-voltage characteristics of In0.3Ga0.7As/In0.29Al0.71As double-barrier resonant tunneling diodes grown on GaAs substrates. These devices exhibit peak-to-valley current ratios as high as 7.6 and 19.5 at room temperature and 77 K, respectively. Two negative differential resistance regions are also observed for devices with larger well width. These results have shown that high quality epilayer can be obtained despite the large lattice mismatch between In0.3Ga0.7As and GaAs.

UR - http://www.scopus.com/inward/record.url?scp=85063579394&partnerID=8YFLogxK

U2 - 10.1109/EDMS.1994.771193

DO - 10.1109/EDMS.1994.771193

M3 - 會議論文

AN - SCOPUS:85063579394

T2 - 1994 International Electron Devices and Materials Symposium, EDMS 1994

Y2 - 12 July 1994 through 15 July 1994

ER -

High peak-to-valley current ratio In0.3Ga0.7As/In0.29Al0.7, As resonant tunneling diodes grown on GaAs

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???event.eventtypes.event.conference???

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High peak-to-valley current ratio In_0.3Ga_0.7As/In_0.29Al_0.7, As resonant tunneling diodes grown on GaAs