High optical property vertically aligned InAs quantum dot structures with GaAsSb overgrown layers

Wei Sheng Liu; Hong Ming Wu; Yu Ann Liao; Jen Inn Chyi; Wen Yen Chen; Tzu Min Hsu

doi:10.1016/j.jcrysgro.2010.10.136

High optical property vertically aligned InAs quantum dot structures with GaAsSb overgrown layers

Wei Sheng Liu, Hong Ming Wu, Yu Ann Liao, Jen Inn Chyi, Wen Yen Chen, Tzu Min Hsu

電機工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

19 引文斯高帕斯（Scopus）

摘要

This study investigates the feasibility of growing high quality columnar InAs/GaAsSb quantum dots (QDs) on a GaAs (1 0 0) substrate using a molecular beam epitaxial system. Structural and photoluminescence (PL) studies are conducted on vertically aligned, ten-period InAs quantum dot (QD) stacks with two different overgrown layer designs. Experimental results indicate an increased dot density of 5×10¹⁰ cm^-2 with completely suppressed coalescences in vertically aligned InAs quantum dots capped by a GaAsSb layer. This finding demonstrates a columnar dot structure with an enhanced luminescent intensity, activation energy, and narrow spectral line width of 22 meV.

原文	???core.languages.en_GB???
頁（從 - 到）	164-166
頁數	3
期刊	Journal of Crystal Growth
卷	323
發行號	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2010.10.136
出版狀態	已出版 - 15 5月 2011

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10.1016/j.jcrysgro.2010.10.136

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title = "High optical property vertically aligned InAs quantum dot structures with GaAsSb overgrown layers",

abstract = "This study investigates the feasibility of growing high quality columnar InAs/GaAsSb quantum dots (QDs) on a GaAs (1 0 0) substrate using a molecular beam epitaxial system. Structural and photoluminescence (PL) studies are conducted on vertically aligned, ten-period InAs quantum dot (QD) stacks with two different overgrown layer designs. Experimental results indicate an increased dot density of 5×1010 cm-2 with completely suppressed coalescences in vertically aligned InAs quantum dots capped by a GaAsSb layer. This finding demonstrates a columnar dot structure with an enhanced luminescent intensity, activation energy, and narrow spectral line width of 22 meV.",

keywords = "Molecular beam epitaxy, Nanostructures, Semiconducting IIIV materials, Semiconducting indium compound",

author = "Liu, {Wei Sheng} and Wu, {Hong Ming} and Liao, {Yu Ann} and Chyi, {Jen Inn} and Chen, {Wen Yen} and Hsu, {Tzu Min}",

note = "Funding Information: This work was supported in part by the National Science Council of Taiwan of ROC under Contract no. NSC 98-2218-E-155-010 .",

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AU - Liu, Wei Sheng

AU - Wu, Hong Ming

AU - Liao, Yu Ann

AU - Chyi, Jen Inn

AU - Chen, Wen Yen

AU - Hsu, Tzu Min

N1 - Funding Information: This work was supported in part by the National Science Council of Taiwan of ROC under Contract no. NSC 98-2218-E-155-010 .

PY - 2011/5/15

Y1 - 2011/5/15

N2 - This study investigates the feasibility of growing high quality columnar InAs/GaAsSb quantum dots (QDs) on a GaAs (1 0 0) substrate using a molecular beam epitaxial system. Structural and photoluminescence (PL) studies are conducted on vertically aligned, ten-period InAs quantum dot (QD) stacks with two different overgrown layer designs. Experimental results indicate an increased dot density of 5×1010 cm-2 with completely suppressed coalescences in vertically aligned InAs quantum dots capped by a GaAsSb layer. This finding demonstrates a columnar dot structure with an enhanced luminescent intensity, activation energy, and narrow spectral line width of 22 meV.

AB - This study investigates the feasibility of growing high quality columnar InAs/GaAsSb quantum dots (QDs) on a GaAs (1 0 0) substrate using a molecular beam epitaxial system. Structural and photoluminescence (PL) studies are conducted on vertically aligned, ten-period InAs quantum dot (QD) stacks with two different overgrown layer designs. Experimental results indicate an increased dot density of 5×1010 cm-2 with completely suppressed coalescences in vertically aligned InAs quantum dots capped by a GaAsSb layer. This finding demonstrates a columnar dot structure with an enhanced luminescent intensity, activation energy, and narrow spectral line width of 22 meV.

KW - Molecular beam epitaxy

KW - Nanostructures

KW - Semiconducting IIIV materials

KW - Semiconducting indium compound

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High optical property vertically aligned InAs quantum dot structures with GaAsSb overgrown layers

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