High hole mobility InGaSb/AlSb QW field effect transistors grown on Si by molecular beam epitaxy

Pei Chin Chiu; Hsuan Wei Huang; Wei Jen Hsueh; Yu Ming Hsin; Cheng Yu Chen; Jen Inn Chyi

doi:10.1016/j.jcrysgro.2015.03.052

High hole mobility InGaSb/AlSb QW field effect transistors grown on Si by molecular beam epitaxy

Pei Chin Chiu, Hsuan Wei Huang, Wei Jen Hsueh, Yu Ming Hsin, Cheng Yu Chen, Jen Inn Chyi

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

4 引文斯高帕斯（Scopus）

摘要

Growth of InGaSb/AlSb high hole mobility quantum well field effect transistors (QW FETs) on Si substrates with a step-graded GaAsSb metamorphic buffer layer by molecular beam epitaxy is explored. With an optimized growth temperature for the InGaSb/AlSb QW, hole mobility of 770 cm²/V s and 3060 cm²/V s have been achieved at room temperature and 77 K, respectively. It is also found that the twins in the samples do not cause significant anisotropic behavior of the InGaSb QW FETs in term of gate direction.

原文	???core.languages.en_GB???
頁（從 - 到）	385-388
頁數	4
期刊	Journal of Crystal Growth
卷	425
DOIs	https://doi.org/10.1016/j.jcrysgro.2015.03.052
出版狀態	已出版 - 28 7月 2015

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10.1016/j.jcrysgro.2015.03.052

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title = "High hole mobility InGaSb/AlSb QW field effect transistors grown on Si by molecular beam epitaxy",

abstract = "Growth of InGaSb/AlSb high hole mobility quantum well field effect transistors (QW FETs) on Si substrates with a step-graded GaAsSb metamorphic buffer layer by molecular beam epitaxy is explored. With an optimized growth temperature for the InGaSb/AlSb QW, hole mobility of 770 cm2/V s and 3060 cm2/V s have been achieved at room temperature and 77 K, respectively. It is also found that the twins in the samples do not cause significant anisotropic behavior of the InGaSb QW FETs in term of gate direction.",

keywords = "A3. Molecular beam epitaxy, A3. Quantum wells, B2. Semiconducting III-V materials, B3. Field effect transistors",

author = "Chiu, {Pei Chin} and Huang, {Hsuan Wei} and Hsueh, {Wei Jen} and Hsin, {Yu Ming} and Chen, {Cheng Yu} and Chyi, {Jen Inn}",

note = "Publisher Copyright: {\textcopyright} 2015 Elsevier B.V.",

year = "2015",

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doi = "10.1016/j.jcrysgro.2015.03.052",

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T1 - High hole mobility InGaSb/AlSb QW field effect transistors grown on Si by molecular beam epitaxy

AU - Chiu, Pei Chin

AU - Huang, Hsuan Wei

AU - Hsueh, Wei Jen

AU - Hsin, Yu Ming

AU - Chen, Cheng Yu

AU - Chyi, Jen Inn

PY - 2015/7/28

Y1 - 2015/7/28

N2 - Growth of InGaSb/AlSb high hole mobility quantum well field effect transistors (QW FETs) on Si substrates with a step-graded GaAsSb metamorphic buffer layer by molecular beam epitaxy is explored. With an optimized growth temperature for the InGaSb/AlSb QW, hole mobility of 770 cm2/V s and 3060 cm2/V s have been achieved at room temperature and 77 K, respectively. It is also found that the twins in the samples do not cause significant anisotropic behavior of the InGaSb QW FETs in term of gate direction.

AB - Growth of InGaSb/AlSb high hole mobility quantum well field effect transistors (QW FETs) on Si substrates with a step-graded GaAsSb metamorphic buffer layer by molecular beam epitaxy is explored. With an optimized growth temperature for the InGaSb/AlSb QW, hole mobility of 770 cm2/V s and 3060 cm2/V s have been achieved at room temperature and 77 K, respectively. It is also found that the twins in the samples do not cause significant anisotropic behavior of the InGaSb QW FETs in term of gate direction.

KW - A3. Molecular beam epitaxy

KW - A3. Quantum wells

KW - B2. Semiconducting III-V materials

KW - B3. Field effect transistors

UR - http://www.scopus.com/inward/record.url?scp=84938080590&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2015.03.052

DO - 10.1016/j.jcrysgro.2015.03.052

M3 - 期刊論文

AN - SCOPUS:84938080590

SN - 0022-0248

VL - 425

SP - 385

EP - 388

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

High hole mobility InGaSb/AlSb QW field effect transistors grown on Si by molecular beam epitaxy

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