High Electron Mobility of 1880 cm2V-S In0.17Al0.83N/GaN-on-Si HEMTs with GaN Cap Layer

Yu Jie Luo, Indraneel Sanyal, Wei Chen Tzeng, Yu Li Ho, Ya Chun Chang, Chih Chao Hsu, Jen Inn Chyi, Chao Hsin Wu

研究成果: 書貢獻/報告類型會議論文篇章同行評審

指紋

深入研究「High Electron Mobility of 1880 cm2V-S In0.17Al0.83N/GaN-on-Si HEMTs with GaN Cap Layer」主題。共同形成了獨特的指紋。

Engineering

Keyphrases

Material Science