High Electron Mobility of 1880 cm2V-S In0.17Al0.83N/GaN-on-Si HEMTs with GaN Cap Layer

Yu Jie Luo; Indraneel Sanyal; Wei Chen Tzeng; Yu Li Ho; Ya Chun Chang; Chih Chao Hsu; Jen Inn Chyi; Chao Hsin Wu

doi:10.1109/WiPDAAsia49671.2020.9360271

High Electron Mobility of 1880 cm²V-S In_0.17Al_0.83N/GaN-on-Si HEMTs with GaN Cap Layer

Yu Jie Luo, Indraneel Sanyal, Wei Chen Tzeng, Yu Li Ho, Ya Chun Chang, Chih Chao Hsu, Jen Inn Chyi, Chao Hsin Wu

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

摘要

Since the communication techniques for 5G developed recent years, GaN-based HEMTs have been very promising candidates for high-speed and high-power electronic applications. Due to the intrinsic properties such as breakdown voltage, electron mobility and electron concentration compared to Si, power capability and switching speed can be improved easily by introducing GaN HEMTs into MMICs. But for conventional AlGaN/GaN HEMT, reducing the thickness of barrier (tbarrier) to prevent short channel effect will cause electric properties degrade [1], such as carrier concentration (Ns) and mobility [2]. Therefore, in this work, we replace AlGaN with In0.17Al0.83N, which can be scaled below to 10nm without decreasing Ns.

原文	???core.languages.en_GB???
主出版物標題	2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9781728159553
DOIs	https://doi.org/10.1109/WiPDAAsia49671.2020.9360271
出版狀態	已出版 - 23 9月 2020
事件	2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020 - Suita, Japan 持續時間: 23 9月 2020 → 25 9月 2020

出版系列

名字	2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020

???event.eventtypes.event.conference???

???event.eventtypes.event.conference???	2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020
國家/地區	Japan
城市	Suita
期間	23/09/20 → 25/09/20

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10.1109/WiPDAAsia49671.2020.9360271

引用此

Luo, Y. J., Sanyal, I., Tzeng, W. C., Ho, Y. L., Chang, Y. C., Hsu, C. C., Chyi, J. I., & Wu, C. H. (2020). High Electron Mobility of 1880 cm²V-S In_0.17Al_0.83N/GaN-on-Si HEMTs with GaN Cap Layer. 於 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020 文章 9360271 (2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WiPDAAsia49671.2020.9360271

Luo, Yu Jie ; Sanyal, Indraneel ; Tzeng, Wei Chen 等. / High Electron Mobility of 1880 cm²V-S In_0.17Al_0.83N/GaN-on-Si HEMTs with GaN Cap Layer. 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020. Institute of Electrical and Electronics Engineers Inc., 2020. (2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020).

@inproceedings{9247e151f87042a0bb1db04a1e0923cc,

title = "High Electron Mobility of 1880 cm2V-S In0.17Al0.83N/GaN-on-Si HEMTs with GaN Cap Layer",

abstract = "Since the communication techniques for 5G developed recent years, GaN-based HEMTs have been very promising candidates for high-speed and high-power electronic applications. Due to the intrinsic properties such as breakdown voltage, electron mobility and electron concentration compared to Si, power capability and switching speed can be improved easily by introducing GaN HEMTs into MMICs. But for conventional AlGaN/GaN HEMT, reducing the thickness of barrier (tbarrier) to prevent short channel effect will cause electric properties degrade [1], such as carrier concentration (Ns) and mobility [2]. Therefore, in this work, we replace AlGaN with In0.17Al0.83N, which can be scaled below to 10nm without decreasing Ns.",

keywords = "InAlN/GaN HEMT, T-gate, high frequency application",

author = "Luo, {Yu Jie} and Indraneel Sanyal and Tzeng, {Wei Chen} and Ho, {Yu Li} and Chang, {Ya Chun} and Hsu, {Chih Chao} and Chyi, {Jen Inn} and Wu, {Chao Hsin}",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020 ; Conference date: 23-09-2020 Through 25-09-2020",

year = "2020",

month = sep,

day = "23",

doi = "10.1109/WiPDAAsia49671.2020.9360271",

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series = "2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020",

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Luo, YJ, Sanyal, I, Tzeng, WC, Ho, YL, Chang, YC, Hsu, CC, Chyi, JI & Wu, CH 2020, High Electron Mobility of 1880 cm²V-S In_0.17Al_0.83N/GaN-on-Si HEMTs with GaN Cap Layer. 於 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020., 9360271, 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020, Institute of Electrical and Electronics Engineers Inc., 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020, Suita, Japan, 23/09/20. https://doi.org/10.1109/WiPDAAsia49671.2020.9360271

High Electron Mobility of 1880 cm²V-S In_0.17Al_0.83N/GaN-on-Si HEMTs with GaN Cap Layer. / Luo, Yu Jie; Sanyal, Indraneel; Tzeng, Wei Chen 等.
2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020. Institute of Electrical and Electronics Engineers Inc., 2020. 9360271 (2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020).

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

TY - GEN

T1 - High Electron Mobility of 1880 cm2V-S In0.17Al0.83N/GaN-on-Si HEMTs with GaN Cap Layer

AU - Luo, Yu Jie

AU - Sanyal, Indraneel

AU - Tzeng, Wei Chen

AU - Ho, Yu Li

AU - Chang, Ya Chun

AU - Hsu, Chih Chao

AU - Chyi, Jen Inn

AU - Wu, Chao Hsin

PY - 2020/9/23

Y1 - 2020/9/23

N2 - Since the communication techniques for 5G developed recent years, GaN-based HEMTs have been very promising candidates for high-speed and high-power electronic applications. Due to the intrinsic properties such as breakdown voltage, electron mobility and electron concentration compared to Si, power capability and switching speed can be improved easily by introducing GaN HEMTs into MMICs. But for conventional AlGaN/GaN HEMT, reducing the thickness of barrier (tbarrier) to prevent short channel effect will cause electric properties degrade [1], such as carrier concentration (Ns) and mobility [2]. Therefore, in this work, we replace AlGaN with In0.17Al0.83N, which can be scaled below to 10nm without decreasing Ns.

AB - Since the communication techniques for 5G developed recent years, GaN-based HEMTs have been very promising candidates for high-speed and high-power electronic applications. Due to the intrinsic properties such as breakdown voltage, electron mobility and electron concentration compared to Si, power capability and switching speed can be improved easily by introducing GaN HEMTs into MMICs. But for conventional AlGaN/GaN HEMT, reducing the thickness of barrier (tbarrier) to prevent short channel effect will cause electric properties degrade [1], such as carrier concentration (Ns) and mobility [2]. Therefore, in this work, we replace AlGaN with In0.17Al0.83N, which can be scaled below to 10nm without decreasing Ns.

KW - InAlN/GaN HEMT

KW - T-gate

KW - high frequency application

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U2 - 10.1109/WiPDAAsia49671.2020.9360271

DO - 10.1109/WiPDAAsia49671.2020.9360271

M3 - 會議論文篇章

AN - SCOPUS:85102238314

T3 - 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020

BT - 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020

Y2 - 23 September 2020 through 25 September 2020

ER -

Luo YJ, Sanyal I, Tzeng WC, Ho YL, Chang YC, Hsu CC 等. High Electron Mobility of 1880 cm²V-S In_0.17Al_0.83N/GaN-on-Si HEMTs with GaN Cap Layer. 於 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020. Institute of Electrical and Electronics Engineers Inc. 2020. 9360271. (2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020). doi: 10.1109/WiPDAAsia49671.2020.9360271

High Electron Mobility of 1880 cm2V-S In0.17Al0.83N/GaN-on-Si HEMTs with GaN Cap Layer

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High Electron Mobility of 1880 cm²V-S In_0.17Al_0.83N/GaN-on-Si HEMTs with GaN Cap Layer