High current and low turn-on voltage InAlAs/InGaAsSb/InGaAs heterojunction bipolar transistor

Shu Han Chen, Sheng Yu Wang, Kuo Hung Teng, Jen Inn Chyi

研究成果: 書貢獻/報告類型會議論文篇章同行評審

3 引文 斯高帕斯(Scopus)

摘要

This study investigates the DC characteristics of a heterojunction bipolar transistor (HBT) with a quaternary InGaAsSb base, grown by solid-source molecular beam epitaxy (MBE). The novel In0.52Al0.48As/ InxGa1-xAs1-ySby HBT has a lower base/emitter (B/E) junction turn-on voltage, a lower VCE,offset voltage and a greater junction ideality factor than conventional In 0.52Al0.48As/In0.53Ga0.47As single HBT structures. The quaternary InxGa1-xAS 1-ySby base provides a type-I B/E junction and a type-II base/collector (B/C) junction, suggesting that the InGaAsSb base HBT has great potential for low-power and high-speed applications.

原文???core.languages.en_GB???
主出版物標題IPRM'07
主出版物子標題IEEE 19th International Conference on Indium Phosphide and Related Materials - Conference Proceedings
頁面141-144
頁數4
DOIs
出版狀態已出版 - 2007
事件IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials - Matsue, Japan
持續時間: 14 5月 200718 5月 2007

出版系列

名字Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN(列印)1092-8669

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???event.eventtypes.event.conference???IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials
國家/地區Japan
城市Matsue
期間14/05/0718/05/07

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