High-brightness inverted InGaN-GaN multiple-quantum-well light-emitting diodes without a transparent conductive layer

Chia Ming Lee, Chang Cheng Chuo, I. Ling Chen, Jui Cheng Chang, Jen Inn Chyi

研究成果: 雜誌貢獻通訊期刊論文同行評審

26 引文 斯高帕斯(Scopus)

摘要

Unlike the conventional layer structure of an InGaN-GaN multiple-quantum-well light-emitting diode (LED), an LED with reversed p-type and n-type layer sequence, and an n+/p+ tunnel junction has been investigated. When operated at 20 mA, the output power of the inverted LED is almost twice that of the conventional LED. Since the structures of these two LEDs are alike when analyzed by X-ray diffraction, the improvement in the light intensity could be attributed to the elimination of the absorption/reflection by the transparent conductive layer and/or some quality improvement of p-type GaN in the inverted LED.

原文???core.languages.en_GB???
頁(從 - 到)156-158
頁數3
期刊IEEE Electron Device Letters
24
發行號3
DOIs
出版狀態已出版 - 3月 2003

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