@article{f0cd417121eb433ead539247033b5f75,
title = "High-brightness inverted InGaN-GaN multiple-quantum-well light-emitting diodes without a transparent conductive layer",
abstract = "Unlike the conventional layer structure of an InGaN-GaN multiple-quantum-well light-emitting diode (LED), an LED with reversed p-type and n-type layer sequence, and an n+/p+ tunnel junction has been investigated. When operated at 20 mA, the output power of the inverted LED is almost twice that of the conventional LED. Since the structures of these two LEDs are alike when analyzed by X-ray diffraction, the improvement in the light intensity could be attributed to the elimination of the absorption/reflection by the transparent conductive layer and/or some quality improvement of p-type GaN in the inverted LED.",
keywords = "GaN, Inverse light-emitting diodes, Light-emitting diodes (LEDs), Tunneling",
author = "Lee, {Chia Ming} and Chuo, {Chang Cheng} and Chen, {I. Ling} and Chang, {Jui Cheng} and Chyi, {Jen Inn}",
note = "Funding Information: Manuscript received November 6, 2002; revised January 9, 2003. This work was supported in part by TEKCORE Company, Ltd., by the National Science Council of Taiwan, R.O.C., under Contract NSC89-2215-E-008-031, and by the Ministry of Education of R.O.C. under the Program for Promoting Academic Excellence of Universities, 89-E-FA06-1-4. The review of this letter was arranged by Editor D. Ritter.",
year = "2003",
month = mar,
doi = "10.1109/LED.2003.809533",
language = "???core.languages.en_GB???",
volume = "24",
pages = "156--158",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
number = "3",
}