High breakdown voltage Au/Pt/GaN Schottky diodes

G. T. Dang, A. P. Zhang, M. M. Mshewa, F. Ren, J. I. Chyi, C. M. Lee, C. C. Chuo, G. C. Chi, J. Han, S. N.G. Chu, R. G. Wilson, X. A. Cao, S. J. Pearton

研究成果: 雜誌貢獻會議論文同行評審

19 引文 斯高帕斯(Scopus)

摘要

High-breakdown voltage Au/Pt/GaN diode rectifiers were fabricated on epilayers grown by metallorganic chemical vapor deposition. Reverse breakdown voltages of 550 and >2000 V were demonstrated with vertically depleting structures and lateral devices respectively. Figures-of-merit in the range 4.2 to 4.8 MW/cm-2 were also achieved. Reverse leakage currents and forward on-voltages still exceeded theoretical minimum values, but were nevertheless comparable to SiC Schottky rectifiers.

原文???core.languages.en_GB???
頁(從 - 到)1135-1138
頁數4
期刊Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
18
發行號4 I
DOIs
出版狀態已出版 - 7月 2000
事件46th National Symposium of the American Vacuum Society - Seatlle, WA, USA
持續時間: 25 10月 199929 10月 1999

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