摘要
High-breakdown voltage Au/Pt/GaN diode rectifiers were fabricated on epilayers grown by metallorganic chemical vapor deposition. Reverse breakdown voltages of 550 and >2000 V were demonstrated with vertically depleting structures and lateral devices respectively. Figures-of-merit in the range 4.2 to 4.8 MW/cm-2 were also achieved. Reverse leakage currents and forward on-voltages still exceeded theoretical minimum values, but were nevertheless comparable to SiC Schottky rectifiers.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 1135-1138 |
頁數 | 4 |
期刊 | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
卷 | 18 |
發行號 | 4 I |
DOIs | |
出版狀態 | 已出版 - 7月 2000 |
事件 | 46th National Symposium of the American Vacuum Society - Seatlle, WA, USA 持續時間: 25 10月 1999 → 29 10月 1999 |