High breakdown voltage and low thermal effect micromachined AlGaN/GaN HEMTs

Hsien Chin Chiu, Hsiang Chun Wang, Chih Wei Yang, Yue Ming Hsin, Jen Inn Chyi, Chang Luen Wu, Chian Sern Chang

研究成果: 雜誌貢獻期刊論文同行評審

8 引文 斯高帕斯(Scopus)

摘要

This work develops a thermally stable micromachined AlGaN/GaN high-electron mobility transistor (HEMT) with an enhanced breakdown voltage. After removal of the Si substrate beneath the HEMT, a 300-nm SiO2 and a 20- μm copper layer are deposited to form the GaN-on-insulator (G.O.I.) structure. The self-heating at high current that is exhibited by GaN HEMTs that are by previously developed full substrate removal methods is eliminated. The need for complicated substrate-transfer technology is also eliminated, increasing chip package yield. The low frequency noise measurement results also demonstrate that the trap density of the buffer/transition layer is reduced by the removal of the substrate and micromachining of the HEMTs.

原文???core.languages.en_GB???
文章編號6787014
頁(從 - 到)726-731
頁數6
期刊IEEE Transactions on Device and Materials Reliability
14
發行號2
DOIs
出版狀態已出版 - 6月 2014

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