摘要
This work develops a thermally stable micromachined AlGaN/GaN high-electron mobility transistor (HEMT) with an enhanced breakdown voltage. After removal of the Si substrate beneath the HEMT, a 300-nm SiO2 and a 20- μm copper layer are deposited to form the GaN-on-insulator (G.O.I.) structure. The self-heating at high current that is exhibited by GaN HEMTs that are by previously developed full substrate removal methods is eliminated. The need for complicated substrate-transfer technology is also eliminated, increasing chip package yield. The low frequency noise measurement results also demonstrate that the trap density of the buffer/transition layer is reduced by the removal of the substrate and micromachining of the HEMTs.
原文 | ???core.languages.en_GB??? |
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文章編號 | 6787014 |
頁(從 - 到) | 726-731 |
頁數 | 6 |
期刊 | IEEE Transactions on Device and Materials Reliability |
卷 | 14 |
發行號 | 2 |
DOIs | |
出版狀態 | 已出版 - 6月 2014 |