Heterojunction Tunneling and Reverse Shockley-Read-Hall Recombination Effects in Si_1-xGe_x Channel/Si SDE CFETs for Steeper Subthreshold Swing and Low DIBL

This work demonstrates a non-classical carrier transport mechanism at the heterointerface between SiGe channel and the Si source/drain extensions. This effect improves the subthreshold swing by 11%, mitigates short-channel effects by 37%, and enables more efficient and symmetric voltage transfer, along with a 33% increase in SRAM static noise margin in short-channel CFETs. Simulation results further indicates an anomalous reverse Shockley-Read-Hall recombination effect at the junction, thereby improves CFET reliability regardless of scaling. This approach paves a new path for scaling technology.