Heterogeneously integrated InP based evanescently-coupled high-speed and high-power p-i-n photodiodes on silicon-on-insulator (SOI) substrate

Jared Hulme, M. J. Kennedy, Rui Lin Chao, Tin Komljenovic, Jin Wei Shi, J. E. Bowers

研究成果: 書貢獻/報告類型會議論文篇章同行評審

2 引文 斯高帕斯(Scopus)

摘要

We demonstrate InP based evanescently-coupled p-i-n photodiodes heterogeneously integrated onto silicon-on-insulator substrate. Using advanced waveguide structures and fabrication processes, it simultaneously achieves 67 GHz O-E bandwidth (RC-free), broad optical window (1520-1600nm) with 0.5 A/W internal responsivity, and high saturation currents (9 mA at 70 GHz).

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主出版物標題2016 IEEE International Topical Meeting on Microwave Photonics, MWP 2016
發行者Institute of Electrical and Electronics Engineers Inc.
頁面233-236
頁數4
ISBN(電子)9781509016020
DOIs
出版狀態已出版 - 19 12月 2016
事件2016 IEEE International Topical Meeting on Microwave Photonics, MWP 2016 - Long Beach, United States
持續時間: 31 10月 20163 11月 2016

出版系列

名字2016 IEEE International Topical Meeting on Microwave Photonics, MWP 2016

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???event.eventtypes.event.conference???2016 IEEE International Topical Meeting on Microwave Photonics, MWP 2016
國家/地區United States
城市Long Beach
期間31/10/163/11/16

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