Hall-effect measurements probing the degree of charge-carrier delocalization in solution-processed crystalline molecular semiconductors

Jui Fen Chang, Tomo Sakanoue, Yoann Olivier, Takafumi Uemura, Marie Beatrice Dufourg-Madec, Stephen G. Yeates, Jérôme Cornil, Jun Takeya, Alessandro Troisi, Henning Sirringhaus

研究成果: 雜誌貢獻期刊論文同行評審

104 引文 斯高帕斯(Scopus)

摘要

Intramolecular structure and intermolecular packing in crystalline molecular semiconductors should have profound effects on the charge-carrier wave function, but simple drift mobility measurements are not very sensitive to this. Here we show that differences in the Hall resistance of two soluble pentacene derivatives can be explained with different degrees of carrier delocalization being limited by thermal lattice fluctuations. A combination of Hall measurements, optical spectroscopy, and theoretical simulations provides a powerful probe of structure-property relationships at a molecular level.

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文章編號066601
期刊Physical Review Letters
107
發行號6
DOIs
出版狀態已出版 - 2 8月 2011

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