Growth of single-crystalline cobalt silicide nanowires with excellent physical properties

Yu Hsin Liang, Shih Ying Yu, Cheng Lun Hsin, Chun Wei Huang, Wen Wei Wu

研究成果: 雜誌貢獻期刊論文同行評審

20 引文 斯高帕斯(Scopus)

摘要

With the miniaturization of electron devices, the minuscule structures are important to state-of-the-art science and technology. Therefore, the growth methods and properties of nanomaterials have been extensively studied recently. Here, we use chemical vapor transport (CVT) methods to synthesize single-crystalline cobalt silicide nanowires (NWs) by using (CoCl26 H2O) as a single-source precursor. By changing reaction temperature and ambient pressure, we can obtain different morphology of cobalt silicide NWs under the appropriate concentration of silicon and cobalt. The field emission measurement of CoSi NWs shows low turn-on field (5.02 Vm) and it is outstanding for magnetic properties that differ from the bulk CoSi. The CoSi nanowires with different diameters have diverse magnetic saturation (Ms) and coercive force (Hc).

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文章編號074302
期刊Journal of Applied Physics
110
發行號7
DOIs
出版狀態已出版 - 1 10月 2011

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