Growth of hydrogenated microcrystalline silicon thin films using electron cyclotron resonance chemical deposition method

Teng Hsiang Chang, Yen Ho Chu, Chien Chieh Lee, Jenq Yang Chang, Tomi T. Li, I. Chen Chen

研究成果: 書貢獻/報告類型會議論文篇章同行評審

摘要

Hydrogenated microcrystalline silicon (μc-Si:H) thin films have been grown on glass substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) at a low temperature of 180 °C. We investigate the influence of hydrogen dilution ratio (H2/SiH4) and working pressure on structural properties as deposition rate, crystallinity, and hydrogen content of the μc-Si:H. It is found that with increasing hydrogen dilution ratio and decreasing the working pressure, the deposition rate and the hydrogen content decrease, while the crystallinity increases. The phenomenon is attributed by the etching effect of hydrogen atoms, which will break the weak bonds to form an order structure. Furthermore, we have obtained high crystallinity under low hydrogen dilution ratio and low temperature. We have demonstrated that high-crystallinity μc-Si:H thin films can be grown under much lower hydrogen dilution ratio compared with conventional PECVD method by ECR-CVD due to the high plasma density.

原文???core.languages.en_GB???
主出版物標題Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices
主出版物子標題TFT Technologies and FPD Materials
發行者IEEE Computer Society
頁面237-240
頁數4
ISBN(列印)9784863483958
DOIs
出版狀態已出版 - 2014
事件21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014 - Kyoto, Japan
持續時間: 2 7月 20144 7月 2014

出版系列

名字Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

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???event.eventtypes.event.conference???21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014
國家/地區Japan
城市Kyoto
期間2/07/144/07/14

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