Growth of high-quality relaxed SiGe films with an intermediate Si1-yCy layer for strained Si n-MOSFETs

P. S. Chen, S. W. Lee, K. F. Liao

研究成果: 雜誌貢獻期刊論文同行評審

2 引文 斯高帕斯(Scopus)

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Engineering & Materials Science

Chemical Compounds

Physics & Astronomy