Growth of high quality AlN on sapphire by using a low-temperature AlN interlayer

Keyphrases

• Acoustic Devices 25%
• AlGaN-GaN 25%
• AlN Interlayer 100%
• AlN Template 100%
• Annihilation Process 25%
• Bulk Material 25%
• Bulk Substrate 25%
• Crystal Growth 25%
• Dipole 25%
• Dislocation 75%
• Epitaxial Growth 25%
• Etch pit Density 25%
• Full Width at Half Maximum 25%
• GaN Schottky Diodes 25%
• Growth Form 50%
• Growth Technology 25%
• Growth Temperature 25%
• Half Loop 25%
• High Breakdown Voltage 25%
• High Figure of Merit 25%
• High Power Electronics 25%
• Low Dislocation Density 25%
• Low Temperature 100%
• Main Idea 25%
• Metal-organic Chemical Vapor Deposition (MOCVD) 25%
• Mode Change 25%
• Nitrides 25%
• Photonic Devices 25%
• Rocking Curve 25%
• Sapphire 100%
• Sapphire Substrate 25%
• Screw 25%
• V(III) 25%

Material Science

• Acoustic Device 10%
• Aluminum Nitride 100%
• Crystal Growth 10%
• Density 20%
• Epitaxy 10%
• Metal-Organic Chemical Vapor Deposition 10%
• Optical Device 10%
• Sapphire 100%
• Schottky Diode 10%