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Growth of high quality AlN on sapphire by using a low-temperature AlN interlayer
Hsueh Hsing Liu, Guan Ting Chen, Yung Ling Lan, Geng Yen Lee,
Jen Inn Chyi
電機工程學系
研究成果
:
雜誌貢獻
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會議論文
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同行評審
5
引文 斯高帕斯(Scopus)
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Mathematics
Sapphire
100%
Dislocation
64%
Template
63%
Substrate
30%
AlGaN
27%
Chemical Vapor Deposition
24%
Power Electronics
21%
Photonics
21%
Epitaxial Growth
21%
Figure of Merit
19%
Crystal Growth
18%
Diode
18%
Dipole
16%
High Power
15%
Annihilation
15%
Voltage
14%
Metals
14%
Acoustics
14%
Breakdown
14%
Tend
9%
Curve
8%
Demonstrate
7%
Engineering & Materials Science
Sapphire
70%
Ultraviolet devices
35%
Acoustic devices
29%
Growth temperature
28%
Photonic devices
27%
Organic chemicals
27%
Full width at half maximum
25%
Aluminum nitride
25%
Substrates
24%
Crystal growth
24%
Epitaxial growth
24%
Temperature
21%
Chemical vapor deposition
20%
Electric breakdown
19%
Power electronics
16%
Diodes
16%
X rays
15%
Metals
11%
Physics & Astronomy
templates
48%
interlayers
48%
sapphire
44%
aluminum nitrides
14%
screws
14%
Schottky diodes
13%
electrical faults
12%
figure of merit
12%
metalorganic chemical vapor deposition
12%
crystal growth
12%
dipoles
9%
photonics
9%
acoustics
7%
curves
7%
electronics
6%
x rays
5%
Chemical Compounds
Breakdown Voltage
39%
Aluminium Nitride
35%
Epitaxial Growth
32%
Figure of Merit
30%
Dipole
26%
Crystal Growth
25%
Time
9%