@inproceedings{ac56a748f884480fb73d1bf357c307c1,
title = "Growth of crack-free semi-polar (1-101) GaN on a 7°-off (001) Si substrate by metal-organic chemical vapor deposition",
abstract = "This paper reports a novel selective growth method for growing crack-free semi-polar (1-101) GaN on 7°-off (001) Si substrates by adding SiO 2 stripes in perpendicular to the V-grooves on Si. This method can effectively reduce the thermal stress between GaN and Si substrate so that crack-free (1-101) GaN films as thick as 1 μm is achieved after coalescence even without an AlN interlayer. Cathodoluminescence measurements show the presence of low dislocation density areas, which can be attributed to the bending of dislocations toward to the [1-100] and [11-20] directions during the facet growth.",
keywords = "GaN, Si, selective growth, semi-polar",
author = "Lin, {Hsien Yu} and Liu, {Hsueh Hsing} and Liao, {Chen Zi} and Chyi, {Jen Inn}",
year = "2011",
doi = "10.1117/12.876356",
language = "???core.languages.en_GB???",
isbn = "9780819484765",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Gallium Nitride Materials and Devices VI",
note = "Gallium Nitride Materials and Devices VI ; Conference date: 24-01-2011 Through 27-01-2011",
}