In this work, growth of AlInN and its application to AlInN/GaN metal-oxide-semiconductor high electron mobility transistors are investigated. It is found that a GaN cap on AlInN layer improves the transistor's off-state breakdown voltage (VB) and on-state resistance (Ron).
|頁（從 - 到）||3-8|
|出版狀態||已出版 - 2014|
|事件||Symposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting - Orlando, United States|
持續時間: 11 5月 2014 → 15 5月 2014