Growth and characterization of high power AlInN/GaN HEMTs

J. I. Chyi; G. Y. Lee; P. T. Tu; N. T. Yeh

doi:10.1149/06104.0003ecst

Growth and characterization of high power AlInN/GaN HEMTs

J. I. Chyi, G. Y. Lee, P. T. Tu, N. T. Yeh

電機工程學系

研究成果: 雜誌貢獻 › 會議論文 › 同行評審

2 引文斯高帕斯（Scopus）

摘要

In this work, growth of AlInN and its application to AlInN/GaN metal-oxide-semiconductor high electron mobility transistors are investigated. It is found that a GaN cap on AlInN layer improves the transistor's off-state breakdown voltage (V_B) and on-state resistance (R_on).

原文	???core.languages.en_GB???
頁（從 - 到）	3-8
頁數	6
期刊	ECS Transactions
卷	61
發行號	4
DOIs	https://doi.org/10.1149/06104.0003ecst
出版狀態	已出版 - 2014
事件	Symposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting - Orlando, United States 持續時間: 11 5月 2014 → 15 5月 2014

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10.1149/06104.0003ecst

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AU - Lee, G. Y.

AU - Tu, P. T.

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AB - In this work, growth of AlInN and its application to AlInN/GaN metal-oxide-semiconductor high electron mobility transistors are investigated. It is found that a GaN cap on AlInN layer improves the transistor's off-state breakdown voltage (VB) and on-state resistance (Ron).

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T2 - Symposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting

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Growth and characterization of high power AlInN/GaN HEMTs

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