Growth and characterization of gallium arsenide on sapphire by molecular beam epitaxy

D. Biswas, J. I. Chyi, H. Morkoç, S. DiVita, G. Kordas

研究成果: 雜誌貢獻期刊論文同行評審

摘要

Gallium Arsenide thin films have been successfully grown onto (1102) sapphire substrates by Molecular Beam Epitaxy methods using a graded growth procedure. The initial layers of GaAs were grown at lower growth rates and at lower substrate temperatures, followed by a thicker GaAs layer grown at usual growth rate of 1 μm/h. The films grown at temperature of 585 °C show good surface morphology. Silicon doped GaAs films exhibit n type conductivity and show low temperature photoluminescence band with peak energy at 1.502 eV and line width of about 42 meV.

原文???core.languages.en_GB???
頁(從 - 到)86-91
頁數6
期刊Proceedings of SPIE - The International Society for Optical Engineering
970
DOIs
出版狀態已出版 - 16 1月 1989

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