Growth and characterization of crack-free semi-polar (1-101) GaN on 7°-off (001) Si substrates by metal-organic chemical vapor deposition

Hsueh Hsing Liu, Hsien Yu Lin, Chen Zi Liao, Jen Inn Chyi

研究成果: 雜誌貢獻期刊論文同行評審

4 引文 斯高帕斯(Scopus)

摘要

This paper reports a selective growth method for growing crack-free semi-polar (1-101) GaN on V-grooved 7°-off (001) Si substrates by using a reticular SiO2 mask. This method effectively reduces the effect of thermal stress on GaN so that crack-free (1-101) GaN films as thick as 1 μm are obtained after coalescence of the selectively grown hexagonal pyramids. Transmission electron microscopy investigations clearly show the presence of low dislocation density regions, which result from the bending of dislocations toward the {1-100} directions during the facet growth stage. The stress and corresponding localized surface defects in GaN grown on the patterned Si substrates are depicted by cathodoluminescence spectroscopy.

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頁(從 - 到)N3001-N3005
期刊ECS Journal of Solid State Science and Technology
2
發行號8
DOIs
出版狀態已出版 - 2013

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