摘要
This letter presents a seeding control scheme by utilizing gravity force to form an agglomeration of molten Co seeds on a patterned inverted silicon nanopyramid. Nanometer sized molten Co seeds formed on a nonwettable inverted pyramid surface can roll along the inclination followed by aggregation to form a singular seed with the size depending on the pyramid size and the thickness of as-deposited Co film inside the pyramid. The proposed scheme allowing the formation of well-aligned catalytic seeds with manipulated size will promise the control growth of 1-D material for practical integrated microelectronic device fabrication.
原文 | ???core.languages.en_GB??? |
---|---|
文章編號 | 4982691 |
頁(從 - 到) | 427-430 |
頁數 | 4 |
期刊 | IEEE Transactions on Nanotechnology |
卷 | 8 |
發行號 | 4 |
DOIs | |
出版狀態 | 已出版 - 7月 2009 |