Germanium antimony sulphide nano wires fabricated by chemical vapour deposition and e-beam lithography

C. C. Huang, Chao Yi Tai, C. J. Liu, R. E. Simpson, K. Knight, D. W. Hewak

研究成果: 書貢獻/報告類型會議論文篇章同行評審

摘要

Germanium antimony sulphide (Ge-Sb-S) amorphous thin films have been deposited directly onto SiO2-on-silicon substrates by means of chemical vapour deposition. The Ge-Sb-S films have been characterized by micro-Raman, scanning electron microscopy, energy dispersive X-ray analysis and static tester techniques. Ge-Sb-S nano wires have been patterned and fabricated by e-beam lithography and dry etching techniques. Modeling results show the potential for fast switching of these Ge-Sb-S nano wire structures, making it a possible candidate for the phase-change memory applications.

原文???core.languages.en_GB???
主出版物標題Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, NSTI-Nanotech, Nanotechnology 2008
頁面96-99
頁數4
出版狀態已出版 - 2008
事件2008 NSTI Nanotechnology Conference and Trade Show, NSTI Nanotech 2008 Joint Meeting, Nanotechnology 2008 - Quebec City, QC, United States
持續時間: 1 6月 20085 6月 2008

出版系列

名字Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, NSTI-Nanotech, Nanotechnology 2008
3

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???event.eventtypes.event.conference???2008 NSTI Nanotechnology Conference and Trade Show, NSTI Nanotech 2008 Joint Meeting, Nanotechnology 2008
國家/地區United States
城市Quebec City, QC
期間1/06/085/06/08

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