Geometry effect on SiGe heterounction bipolar transistor unit cell for 1W high-efficiency RF power amplifier applications

Physics & Astronomy

• power amplifiers 95%
• bipolar transistors 87%
• power efficiency 62%
• output 48%
• geometry 45%
• cells 43%
• germanium 36%
• heterojunctions 35%
• temperature effects 24%
• performance 23%
• emitters 22%
• silicon 21%
• direct current 21%
• power gain 18%
• figure of merit 12%
• radiant flux density 12%
• breakdown 10%
• spacing 10%

Engineering & Materials Science

• Bipolar transistors 100%
• Heterojunction bipolar transistors 96%
• Power amplifiers 80%
• Geometry 49%
• Germanium 23%
• Silicon 13%
• Thermal effects 11%