Ge photodetector monolithically integrated on si by rapid-melting-growth technique

Keyphrases

• Optical Communications 100%
• Monolithically Integrated 100%
• Rapid Melting Growth 100%
• Growth Techniques 100%
• Ge Photodetector 100%
• Dark Current 50%
• Photocurrent 50%
• Silicon Substrate 50%
• SiGe 50%
• Epilayer 50%
• Responsivity 50%
• Single-crystalline 50%
• Germanium 50%
• Integrated Circuits 50%
• Microscopic Techniques 50%
• Nanocrystallites 50%
• As-deposited 50%
• Reverse Bias 50%
• Ge Layer 50%
• Monolithic Integration 50%
• Optical Detection 50%
• Compatible Process 50%
• Electronic Circuit 50%
• Heterojunction Photodetectors 50%
• Raman Technique 50%

Engineering

• Photodetector 100%
• Melting Point 100%
• Heterojunctions 50%
• Potential Application 50%
• Photocurrent 50%
• Silicon Substrate 50%
• Responsivity 50%
• Monolithic Integration 50%
• Reverse Bias 50%
• Based Optoelectronic Device 50%
• Electronic Circuitry 50%
• Integrated Circuit 50%
• Photometer 50%

Material Science

• Photosensor 100%
• Silicon 33%
• Electronic Circuit 33%
• Epilayers 33%
• Heterojunction 33%
• Nanocrystallites 33%
• Germanium 33%