Ge photodetector monolithically integrated on si by rapid-melting-growth technique

Po Han Huang, Chin Hsien Chou, Cheng Lun Hsin

研究成果: 雜誌貢獻期刊論文同行評審

7 引文 斯高帕斯(Scopus)

摘要

Germanium-based optoelectronic devices have the potential applications in optical communication and detections. In this letter, we demonstrated that high-quality Ge quasi-epilayer can be achieved by rapid-melting-growth and integrated-circuit compatible process. Raman and microscopy techniques revealed that the as-deposited Ge on the silicon substrate became quasi-single crystalline while nanocrystallites embedded within the Ge layer. The Ge/Si heterostructure photodetectors were fabricated with desirable responsivity of 0.22 A/W at -1 V reverse bias and the ratio of photocurrent and dark current is up to 2000 at -0.65 V. This technique demonstrated the possibility of monolithic integration of Ge photodetector for future optical communications at 1.31μm in wavelength with Si electronic circuitry.

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文章編號7065220
頁(從 - 到)1254-1256
頁數3
期刊IEEE Photonics Technology Letters
27
發行號12
DOIs
出版狀態已出版 - 15 6月 2015

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