Gd2O3/GaN metal-oxide-semiconductor field-effect transistor

J. W. Johnson, B. Luo, F. Ren, B. P. Gila, W. Krishnamoorthy, C. R. Abernathy, S. J. Pearton, J. I. Chyi, T. E. Nee, C. M. Lee, C. C. Chuo

研究成果: 雜誌貢獻期刊論文同行評審

102 引文 斯高帕斯(Scopus)

摘要

Gd2O3 has been deposited epitaxially on GaN using elemental Gd and an electron cyclotron resonance oxygen plasma in a gas-source molecular beam epitaxy system. Cross-sectional transmission electron microscopy shows a high concentration of dislocations which arise from the large lattice mismatch between the two materials. GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated using a dielectric stack of single crystal Gd2O3 and amorphous SiO2 show modulation at gate voltages up to 7 V and are operational at source drain voltages up to 80 V. This work represents demonstrations of single crystal growth of Gd2O3 on GaN and of a GaN MOSFET using Gd2O3 in the gate dielectric.

原文???core.languages.en_GB???
頁(從 - 到)3230-3232
頁數3
期刊Applied Physics Letters
77
發行號20
DOIs
出版狀態已出版 - 13 11月 2000

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