摘要
Gd2O3 has been deposited epitaxially on GaN using elemental Gd and an electron cyclotron resonance oxygen plasma in a gas-source molecular beam epitaxy system. Cross-sectional transmission electron microscopy shows a high concentration of dislocations which arise from the large lattice mismatch between the two materials. GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated using a dielectric stack of single crystal Gd2O3 and amorphous SiO2 show modulation at gate voltages up to 7 V and are operational at source drain voltages up to 80 V. This work represents demonstrations of single crystal growth of Gd2O3 on GaN and of a GaN MOSFET using Gd2O3 in the gate dielectric.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 3230-3232 |
頁數 | 3 |
期刊 | Applied Physics Letters |
卷 | 77 |
發行號 | 20 |
DOIs | |
出版狀態 | 已出版 - 13 11月 2000 |