Gate leakage lowering and kink current suppression for antimonide-based field-effect transistors

H. K. Lin; Y. C. Lin; F. H. Huang; T. W. Fan; P. C. Chiu; J. I. Chyi; C. H. Ko; T. M. Kuan; M. K. Hsieh; W. C. Lee; C. H. Wann

doi:10.1016/j.sse.2010.01.013

Gate leakage lowering and kink current suppression for antimonide-based field-effect transistors

H. K. Lin
, Y. C. Lin
, F. H. Huang
, T. W. Fan
, P. C. Chiu
, J. I. Chyi
, C. H. Ko
, T. M. Kuan
, M. K. Hsieh
, W. C. Lee
, C. H. Wann

電機工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

8 引文斯高帕斯（Scopus）

摘要

Conventional InAs/AlSb HEMTs suffer from chemical instability in materials and high kink current. To avoid these drawbacks, this work proposes a novel layer structure of an InAsSb/AlSb HEMT and a novel two-step passivation process. Performance improvements are reduced dc output conductance by approximately 4.6 times at V_DS = 0.5 V and I_D = 100 mA/mm, and gate leakage to 1 × 10^-3 mA/mm from 4 at V_GS = -1.2 V and V_DS = 0.8 V compared with those of two InAs/AlSb HEMTs, one with the conventional one-step and the other with the proposed two-step passivation process. Both dc and rf performances show strong evidences of impact ionization suppression.

原文	???core.languages.en_GB???
頁（從 - 到）	475-478
頁數	4
期刊	Solid-State Electronics
卷	54
發行號	4
DOIs	https://doi.org/10.1016/j.sse.2010.01.013
出版狀態	已出版 - 4月 2010

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10.1016/j.sse.2010.01.013

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@article{2461e4d5d8914aa6b6bfe7b881e29805,

title = "Gate leakage lowering and kink current suppression for antimonide-based field-effect transistors",

abstract = "Conventional InAs/AlSb HEMTs suffer from chemical instability in materials and high kink current. To avoid these drawbacks, this work proposes a novel layer structure of an InAsSb/AlSb HEMT and a novel two-step passivation process. Performance improvements are reduced dc output conductance by approximately 4.6 times at VDS = 0.5 V and ID = 100 mA/mm, and gate leakage to 1 × 10-3 mA/mm from 4 at VGS = -1.2 V and VDS = 0.8 V compared with those of two InAs/AlSb HEMTs, one with the conventional one-step and the other with the proposed two-step passivation process. Both dc and rf performances show strong evidences of impact ionization suppression.",

keywords = "HEMT, InAs/AlSb",

author = "Lin, \{H. K.\} and Lin, \{Y. C.\} and Huang, \{F. H.\} and Fan, \{T. W.\} and Chiu, \{P. C.\} and Chyi, \{J. I.\} and Ko, \{C. H.\} and Kuan, \{T. M.\} and Hsieh, \{M. K.\} and Lee, \{W. C.\} and Wann, \{C. H.\}",

note = "Funding Information: The authors would like to thank the National Science Council of the Republic of China, Taiwan, under Contract No. NSC 97-2221-E-008-093, as well as Taiwan Semiconductor Manufacturing Company under a JDP project for financially supporting this research. Ted Knoy is appreciated for his editorial assistance.",

year = "2010",

month = apr,

doi = "10.1016/j.sse.2010.01.013",

language = "???core.languages.en\_GB???",

volume = "54",

pages = "475--478",

journal = "Solid-State Electronics",

issn = "0038-1101",

number = "4",

}

TY - JOUR

T1 - Gate leakage lowering and kink current suppression for antimonide-based field-effect transistors

AU - Lin, H. K.

AU - Lin, Y. C.

AU - Huang, F. H.

AU - Fan, T. W.

AU - Chiu, P. C.

AU - Chyi, J. I.

AU - Ko, C. H.

AU - Kuan, T. M.

AU - Hsieh, M. K.

AU - Lee, W. C.

AU - Wann, C. H.

N1 - Funding Information: The authors would like to thank the National Science Council of the Republic of China, Taiwan, under Contract No. NSC 97-2221-E-008-093, as well as Taiwan Semiconductor Manufacturing Company under a JDP project for financially supporting this research. Ted Knoy is appreciated for his editorial assistance.

PY - 2010/4

Y1 - 2010/4

N2 - Conventional InAs/AlSb HEMTs suffer from chemical instability in materials and high kink current. To avoid these drawbacks, this work proposes a novel layer structure of an InAsSb/AlSb HEMT and a novel two-step passivation process. Performance improvements are reduced dc output conductance by approximately 4.6 times at VDS = 0.5 V and ID = 100 mA/mm, and gate leakage to 1 × 10-3 mA/mm from 4 at VGS = -1.2 V and VDS = 0.8 V compared with those of two InAs/AlSb HEMTs, one with the conventional one-step and the other with the proposed two-step passivation process. Both dc and rf performances show strong evidences of impact ionization suppression.

AB - Conventional InAs/AlSb HEMTs suffer from chemical instability in materials and high kink current. To avoid these drawbacks, this work proposes a novel layer structure of an InAsSb/AlSb HEMT and a novel two-step passivation process. Performance improvements are reduced dc output conductance by approximately 4.6 times at VDS = 0.5 V and ID = 100 mA/mm, and gate leakage to 1 × 10-3 mA/mm from 4 at VGS = -1.2 V and VDS = 0.8 V compared with those of two InAs/AlSb HEMTs, one with the conventional one-step and the other with the proposed two-step passivation process. Both dc and rf performances show strong evidences of impact ionization suppression.

KW - HEMT

KW - InAs/AlSb

UR - https://www.scopus.com/pages/publications/77349114217

U2 - 10.1016/j.sse.2010.01.013

DO - 10.1016/j.sse.2010.01.013

M3 - 期刊論文

AN - SCOPUS:77349114217

SN - 0038-1101

VL - 54

SP - 475

EP - 478

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 4

ER -

Gate leakage lowering and kink current suppression for antimonide-based field-effect transistors

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