@article{2461e4d5d8914aa6b6bfe7b881e29805,
title = "Gate leakage lowering and kink current suppression for antimonide-based field-effect transistors",
abstract = "Conventional InAs/AlSb HEMTs suffer from chemical instability in materials and high kink current. To avoid these drawbacks, this work proposes a novel layer structure of an InAsSb/AlSb HEMT and a novel two-step passivation process. Performance improvements are reduced dc output conductance by approximately 4.6 times at VDS = 0.5 V and ID = 100 mA/mm, and gate leakage to 1 × 10-3 mA/mm from 4 at VGS = -1.2 V and VDS = 0.8 V compared with those of two InAs/AlSb HEMTs, one with the conventional one-step and the other with the proposed two-step passivation process. Both dc and rf performances show strong evidences of impact ionization suppression.",
keywords = "HEMT, InAs/AlSb",
author = "Lin, {H. K.} and Lin, {Y. C.} and Huang, {F. H.} and Fan, {T. W.} and Chiu, {P. C.} and Chyi, {J. I.} and Ko, {C. H.} and Kuan, {T. M.} and Hsieh, {M. K.} and Lee, {W. C.} and Wann, {C. H.}",
note = "Funding Information: The authors would like to thank the National Science Council of the Republic of China, Taiwan, under Contract No. NSC 97-2221-E-008-093, as well as Taiwan Semiconductor Manufacturing Company under a JDP project for financially supporting this research. Ted Knoy is appreciated for his editorial assistance.",
year = "2010",
month = apr,
doi = "10.1016/j.sse.2010.01.013",
language = "???core.languages.en_GB???",
volume = "54",
pages = "475--478",
journal = "Solid-State Electronics",
issn = "0038-1101",
number = "4",
}