Gate leakage current induced trapping in AlGaN/GaN Schottky-gate HFETs and MISHFETs

Engineering & Materials Science

• MESFET devices 100%
• High electron mobility transistors 70%
• Leakage currents 65%
• Semiconductor materials 54%
• Metals 39%
• Electron injection 24%
• Buffer layers 21%
• Hot carriers 20%
• Relaxation time 19%
• Degradation 10%
• Electric potential 7%

Physics & Astronomy

• leakage 50%
• field effect transistors 48%
• trapping 47%
• MIS (semiconductors) 45%
• insulators 15%
• buffers 8%
• relaxation time 8%
• degradation 7%
• traps 7%
• injection 7%
• electric potential 5%

Chemical Compounds

• Leakage Current 80%
• Field Effect 60%
• Nonconductor 34%
• High Energy Carrier 32%
• Voltage 11%
• Buffer Solution 9%
• Electron Particle 8%
• Amount 6%
• Time 5%