摘要
We first demonstrate a novel high-speed and high-power p-i-n photodiode with a cutoff wavelength at ∼ 2.5 μm. This device is composed of a partially depleted p-type Ga0.8In0.2As0.16Sb0.84 photo-absorption layer grown on GaSb substrate in order to enhance its speed and saturation power performance. With proper passivation processes, a low dark current (∼0.7 μA) and wide (6 GHz) optical-to-electrical (O-E) bandwidth can be simultaneously achieved with a miniaturized size of active mesa diameter (∼8 μm) under 1.55-μm optical wavelength excitation. The electron/hole drift-velocity and electron mobility across the Ga0.8In0.2As0.16Sb0.84 active layer can further be estimated based on the extracted internal response time and device modeling technique. Using the heterodyne-beating setup at 1.55-μm wavelength, the demonstrated device shows a saturation current at ∼3.6 mA (at 6-GHz operating frequency), which is mainly limited by the space-charge (electron/hole) induced screening effect at the depleted absorption region.
原文 | ???core.languages.en_GB??? |
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文章編號 | 7468483 |
頁(從 - 到) | 2796-2801 |
頁數 | 6 |
期刊 | IEEE Transactions on Electron Devices |
卷 | 63 |
發行號 | 7 |
DOIs | |
出版狀態 | 已出版 - 7月 2016 |