GaN/AlGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates

J. R. LaRoche; B. Luo; F. Ren; K. H. Baik; D. Stodilka; B. Gila; C. R. Abernathy; S. J. Pearton; A. Usikov; D. Tsvetkov; V. Soukhoveev; G. Gainer; A. Rechnikov; V. Dimitriev; G. T. Chen; C. C. Pan; J. I. Chyi

doi:10.1016/S0038-1101(03)00290-9

GaN/AlGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates

J. R. LaRoche, B. Luo, F. Ren, K. H. Baik, D. Stodilka, B. Gila, C. R. Abernathy, S. J. Pearton, A. Usikov, D. Tsvetkov, V. Soukhoveev, G. Gainer, A. Rechnikov, V. Dimitriev, G. T. Chen, C. C. Pan, J. I. Chyi

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

25 引文斯高帕斯（Scopus）

摘要

GaN/AlGaN high electron mobility transistors (HEMTs) were fabricated on layer structures grown by metal organic chemical vapor deposition on hydride vapor phase epitaxy grown AlN epi-layers on 6H-SiC substrates. The presence of the AlN provides an insulating buffer for effective inter-device isolation, producing isolation currents in the 10^-9 A range. These initial HEMTs exhibit saturated drain source current of >400 mA/mm with maximum transconductance of >70 mS/mm. The devices show lower degrees of current collapse relative to more conventional HEMTs fabricated on sapphire substrates, suggesting that the lower defect density is beneficial in reducing surface state trap concentration.

原文	???core.languages.en_GB???
頁（從 - 到）	193-196
頁數	4
期刊	Solid-State Electronics
卷	48
發行號	1
DOIs	https://doi.org/10.1016/S0038-1101(03)00290-9
出版狀態	已出版 - 1月 2004

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10.1016/S0038-1101(03)00290-9

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LaRoche, J. R., Luo, B., Ren, F., Baik, K. H., Stodilka, D., Gila, B., Abernathy, C. R., Pearton, S. J., Usikov, A., Tsvetkov, D., Soukhoveev, V., Gainer, G., Rechnikov, A., Dimitriev, V., Chen, G. T., Pan, C. C., & Chyi, J. I. (2004). GaN/AlGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates. Solid-State Electronics, 48(1), 193-196. https://doi.org/10.1016/S0038-1101(03)00290-9

@article{fea34889fe9a4b33b30c024c783761ef,

title = "GaN/AlGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates",

abstract = "GaN/AlGaN high electron mobility transistors (HEMTs) were fabricated on layer structures grown by metal organic chemical vapor deposition on hydride vapor phase epitaxy grown AlN epi-layers on 6H-SiC substrates. The presence of the AlN provides an insulating buffer for effective inter-device isolation, producing isolation currents in the 10-9 A range. These initial HEMTs exhibit saturated drain source current of >400 mA/mm with maximum transconductance of >70 mS/mm. The devices show lower degrees of current collapse relative to more conventional HEMTs fabricated on sapphire substrates, suggesting that the lower defect density is beneficial in reducing surface state trap concentration.",

author = "LaRoche, {J. R.} and B. Luo and F. Ren and Baik, {K. H.} and D. Stodilka and B. Gila and Abernathy, {C. R.} and Pearton, {S. J.} and A. Usikov and D. Tsvetkov and V. Soukhoveev and G. Gainer and A. Rechnikov and V. Dimitriev and Chen, {G. T.} and Pan, {C. C.} and Chyi, {J. I.}",

note = "Funding Information: The work at UF is partially supported by NSF(CTS-0301178) and NASA while work at TDI is partially supported by MDA and managed by the office of Naval Research (STTR grant N0014-02-M-0287) under the symposium of Dr. C.E. Wood. The work at NCU is partially supported by the National Science Council of ROC under contract NSC-89-2215-E-008-031, and by the Ministry of Education of ROC under the program for promoting academic excellence of universities, 89-E-FA06-1-4.",

year = "2004",

month = jan,

doi = "10.1016/S0038-1101(03)00290-9",

language = "???core.languages.en_GB???",

volume = "48",

pages = "193--196",

journal = "Solid-State Electronics",

issn = "0038-1101",

number = "1",

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LaRoche, JR, Luo, B, Ren, F, Baik, KH, Stodilka, D, Gila, B, Abernathy, CR, Pearton, SJ, Usikov, A, Tsvetkov, D, Soukhoveev, V, Gainer, G, Rechnikov, A, Dimitriev, V, Chen, GT, Pan, CC & Chyi, JI 2004, 'GaN/AlGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates', Solid-State Electronics, 卷 48, 編號 1, 頁 193-196. https://doi.org/10.1016/S0038-1101(03)00290-9

TY - JOUR

T1 - GaN/AlGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates

AU - LaRoche, J. R.

AU - Luo, B.

AU - Ren, F.

AU - Baik, K. H.

AU - Stodilka, D.

AU - Gila, B.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Usikov, A.

AU - Tsvetkov, D.

AU - Soukhoveev, V.

AU - Gainer, G.

AU - Rechnikov, A.

AU - Dimitriev, V.

AU - Chen, G. T.

AU - Pan, C. C.

AU - Chyi, J. I.

N1 - Funding Information: The work at UF is partially supported by NSF(CTS-0301178) and NASA while work at TDI is partially supported by MDA and managed by the office of Naval Research (STTR grant N0014-02-M-0287) under the symposium of Dr. C.E. Wood. The work at NCU is partially supported by the National Science Council of ROC under contract NSC-89-2215-E-008-031, and by the Ministry of Education of ROC under the program for promoting academic excellence of universities, 89-E-FA06-1-4.

PY - 2004/1

Y1 - 2004/1

N2 - GaN/AlGaN high electron mobility transistors (HEMTs) were fabricated on layer structures grown by metal organic chemical vapor deposition on hydride vapor phase epitaxy grown AlN epi-layers on 6H-SiC substrates. The presence of the AlN provides an insulating buffer for effective inter-device isolation, producing isolation currents in the 10-9 A range. These initial HEMTs exhibit saturated drain source current of >400 mA/mm with maximum transconductance of >70 mS/mm. The devices show lower degrees of current collapse relative to more conventional HEMTs fabricated on sapphire substrates, suggesting that the lower defect density is beneficial in reducing surface state trap concentration.

AB - GaN/AlGaN high electron mobility transistors (HEMTs) were fabricated on layer structures grown by metal organic chemical vapor deposition on hydride vapor phase epitaxy grown AlN epi-layers on 6H-SiC substrates. The presence of the AlN provides an insulating buffer for effective inter-device isolation, producing isolation currents in the 10-9 A range. These initial HEMTs exhibit saturated drain source current of >400 mA/mm with maximum transconductance of >70 mS/mm. The devices show lower degrees of current collapse relative to more conventional HEMTs fabricated on sapphire substrates, suggesting that the lower defect density is beneficial in reducing surface state trap concentration.

UR - http://www.scopus.com/inward/record.url?scp=0142216313&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(03)00290-9

DO - 10.1016/S0038-1101(03)00290-9

M3 - 期刊論文

AN - SCOPUS:0142216313

SN - 0038-1101

VL - 48

SP - 193

EP - 196

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 1

ER -

GaN/AlGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates

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