GaN electronics for high power, high temperature applications

S. J. Pearton, F. Ren, A. P. Zhang, G. Dang, X. A. Cao, H. Cho, C. R. Abemathy, J. Han, A. G. Baca, C. Monier, P. Chang, R. J. Shul, L. Zhang, J. M. Van Hove, P. P. Chow, J. J. Klaassen, C. J. Polley, A. M. Wowchack, D. J. King, S. N.G. ChuM. Hong, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, J. I. Chyi, C. M. Lee, T. E. Nee, C. C. Chuo, G. C. Chi, J. M. Redwing

研究成果: 雜誌貢獻期刊論文同行評審

6 引文 斯高帕斯(Scopus)


Extremely efficient light emission is achieved in heteroepitaxial layers of GaN based materials. A photonic device fabricated on GaN regions provides better optical output and reliability. The advantages of AlGaInN system are wide bandgaps, good transport properties, and availability of heterostructures. Packaged switches made from AlGaN can operate at temperatures exceeding 250° centigrade, thereby reducing system complexity. The base resistance of GaN heterojunction bipolar transistors (HBTs) is much lower due to high doping level.

頁(從 - 到)34-39
期刊Electrochemical Society Interface
出版狀態已出版 - 6月 2000


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