@article{c3462143b344475a9aafd16c70653a21,
title = "GaN electronics for high power, high temperature applications",
abstract = "Extremely efficient light emission is achieved in heteroepitaxial layers of GaN based materials. A photonic device fabricated on GaN regions provides better optical output and reliability. The advantages of AlGaInN system are wide bandgaps, good transport properties, and availability of heterostructures. Packaged switches made from AlGaN can operate at temperatures exceeding 250° centigrade, thereby reducing system complexity. The base resistance of GaN heterojunction bipolar transistors (HBTs) is much lower due to high doping level.",
author = "Pearton, {S. J.} and F. Ren and Zhang, {A. P.} and G. Dang and Cao, {X. A.} and H. Cho and Abemathy, {C. R.} and J. Han and Baca, {A. G.} and C. Monier and P. Chang and Shul, {R. J.} and L. Zhang and {Van Hove}, {J. M.} and Chow, {P. P.} and Klaassen, {J. J.} and Polley, {C. J.} and Wowchack, {A. M.} and King, {D. J.} and Chu, {S. N.G.} and M. Hong and Polyakov, {A. Y.} and Smirnov, {N. B.} and Govorkov, {A. V.} and Chyi, {J. I.} and Lee, {C. M.} and Nee, {T. E.} and Chuo, {C. C.} and Chi, {G. C.} and Redwing, {J. M.}",
note = "Funding Information: The work at the various institutions has been supported by ONR (J.C. Zolper), DARPA (D. Radack), EPRI (B. Damsky), NSF (L. Hess), by BMDO, and National Science Council of ROC. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed–Martin company, for the US Department of Energy. ",
year = "2000",
month = jun,
language = "???core.languages.en_GB???",
volume = "9",
pages = "34--39",
journal = "Electrochemical Society Interface",
issn = "1064-8208",
number = "2",
}