GaN electronics for high power, high temperature applications

S. J. Pearton, F. Ren, A. P. Zhang, G. Dang, X. A. Cao, K. P. Lee, H. Cho, B. P. Gila, J. W. Johnson, C. Monier, C. R. Abernathy, J. Han, A. G. Baca, J. I. Chyi, C. M. Lee, T. E. Nee, C. C. Chuo, S. N.G. Chu

研究成果: 雜誌貢獻期刊論文同行評審

100 引文 斯高帕斯(Scopus)

摘要

The progress in the fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN HBT and GaN MOSFET is reviewed. Improvements in epitaxial layer quality are studied. The advances in fabrication techniques that led to the improvement of device performance are discussed.

原文???core.languages.en_GB???
頁(從 - 到)227-231
頁數5
期刊Materials Science and Engineering B: Solid-State Materials for Advanced Technology
82
發行號1-3
DOIs
出版狀態已出版 - 22 5月 2001

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