GaInP/GaAs HBTs with selectively regrown emitter and wide bandgap extrinsic base

S. L. Fu; S. Park; Y. M. Hsin; M. C. Ho; T. P. Chin; P. L. Yu; C. W. Tu; P. M. Asbeck; T. Nakamura

doi:10.1109/DRC.1994.1009428

GaInP/GaAs HBTs with selectively regrown emitter and wide bandgap extrinsic base

S. L. Fu, S. Park, Y. M. Hsin, M. C. Ho, T. P. Chin, P. L. Yu, C. W. Tu, P. M. Asbeck, T. Nakamura

電機工程學系

研究成果: 雜誌貢獻 › 會議論文 › 同行評審

4 引文斯高帕斯（Scopus）

原文	???core.languages.en_GB???
文章編號	1009428
頁（從 - 到）	91-92
頁數	2
期刊	Device Research Conference - Conference Digest, DRC
DOIs	https://doi.org/10.1109/DRC.1994.1009428
出版狀態	已出版 - 1994
事件	52nd Annual Device Research Conference, DRC 1994 - Boulder, United States 持續時間: 20 6月 1994 → 22 6月 1994

存取文件

10.1109/DRC.1994.1009428

引用此

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title = "GaInP/GaAs HBTs with selectively regrown emitter and wide bandgap extrinsic base",

author = "Fu, {S. L.} and S. Park and Hsin, {Y. M.} and Ho, {M. C.} and Chin, {T. P.} and Yu, {P. L.} and Tu, {C. W.} and Asbeck, {P. M.} and T. Nakamura",

year = "1994",

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pages = "91--92",

journal = "Device Research Conference - Conference Digest, DRC",

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note = "52nd Annual Device Research Conference, DRC 1994 ; Conference date: 20-06-1994 Through 22-06-1994",

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TY - JOUR

T1 - GaInP/GaAs HBTs with selectively regrown emitter and wide bandgap extrinsic base

AU - Fu, S. L.

AU - Park, S.

AU - Hsin, Y. M.

AU - Ho, M. C.

AU - Chin, T. P.

AU - Yu, P. L.

AU - Tu, C. W.

AU - Asbeck, P. M.

AU - Nakamura, T.

PY - 1994

Y1 - 1994

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U2 - 10.1109/DRC.1994.1009428

DO - 10.1109/DRC.1994.1009428

M3 - 會議論文

AN - SCOPUS:3643072740

SN - 1548-3770

SP - 91

EP - 92

JO - Device Research Conference - Conference Digest, DRC

JF - Device Research Conference - Conference Digest, DRC

M1 - 1009428

T2 - 52nd Annual Device Research Conference, DRC 1994

Y2 - 20 June 1994 through 22 June 1994

ER -