GaAs Metal-Semiconductor-Metal Photodetectors (MSM-PD’S) With Aigaas Cap And Buffer Layers

Rong Heng Yuang, Jia Lin Shieh, Ray Ming Lin, Jen Inn Chyi

研究成果: 雜誌貢獻期刊論文同行評審

2 引文 斯高帕斯(Scopus)

摘要

GaAs metal-semiconductor-metal photodetectors with AIGaAs cap and buffer layers have been fabricated and studied. It is shown that the trap-induced effects which result from the GaAs surface trap states can be avoided by adding an AIGaAs cap layer. In addition, we used an AIGaAs buffer layer to reduce the interfacial charge effects between the GaAs substrate and the GaAs absorption layer. The dark currents were less than 1 nA and the low frequency internal gain was dramatically improved. The results also, show that a complete depletion can occur even at biases below 0.5 V.

原文???core.languages.en_GB???
頁(從 - 到)445-449
頁數5
期刊Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an
18
發行號3
DOIs
出版狀態已出版 - 4月 1995

指紋

深入研究「GaAs Metal-Semiconductor-Metal Photodetectors (MSM-PD’S) With Aigaas Cap And Buffer Layers」主題。共同形成了獨特的指紋。

引用此