GaAs metal-semiconductor-metal photodetectors with AIGaAs cap and buffer layers have been fabricated and studied. It is shown that the trap-induced effects which result from the GaAs surface trap states can be avoided by adding an AIGaAs cap layer. In addition, we used an AIGaAs buffer layer to reduce the interfacial charge effects between the GaAs substrate and the GaAs absorption layer. The dark currents were less than 1 nA and the low frequency internal gain was dramatically improved. The results also, show that a complete depletion can occur even at biases below 0.5 V.
|頁（從 - 到）||445-449|
|期刊||Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an|
|出版狀態||已出版 - 4月 1995|