GaAs metal-semiconductor field-effect transistor with surface oxygen implantation

Y. M. Hsin, K. P. Hsueh, C. J. Hsu, L. W. Wu

研究成果: 雜誌貢獻通訊期刊論文同行評審

摘要

Oxygen implantation has been employed to form a high-resistance region between the channel and the surface of GaAs metal-semiconductor field-effect transistors (MESFETs). Comparable DC and RF performances were achieved for MESFETs with and without oxygen implants; however, MESFETs with the extra oxygen-implantation demonstrated good breakdown performance, less frequency dispersion of drain current, and good time dependence of drain current at 150°C in air.

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頁(從 - 到)L1084-L1085
期刊Japanese Journal of Applied Physics, Part 2: Letters
40
發行號10 B
DOIs
出版狀態已出版 - 15 10月 2001

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