GaAs metal-semiconductor field-effect transistor with surface oxygen implantation

Y. M. Hsin; K. P. Hsueh; C. J. Hsu; L. W. Wu

doi:10.1143/jjap.40.l1084

GaAs metal-semiconductor field-effect transistor with surface oxygen implantation

Y. M. Hsin, K. P. Hsueh, C. J. Hsu, L. W. Wu

研究成果: 雜誌貢獻 › 通訊期刊論文 › 同行評審

摘要

Oxygen implantation has been employed to form a high-resistance region between the channel and the surface of GaAs metal-semiconductor field-effect transistors (MESFETs). Comparable DC and RF performances were achieved for MESFETs with and without oxygen implants; however, MESFETs with the extra oxygen-implantation demonstrated good breakdown performance, less frequency dispersion of drain current, and good time dependence of drain current at 150°C in air.

原文	???core.languages.en_GB???
頁（從 - 到）	L1084-L1085
期刊	Japanese Journal of Applied Physics
卷	40
發行號	10 B
DOIs	https://doi.org/10.1143/jjap.40.l1084
出版狀態	已出版 - 15 10月 2001

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10.1143/jjap.40.l1084

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abstract = "Oxygen implantation has been employed to form a high-resistance region between the channel and the surface of GaAs metal-semiconductor field-effect transistors (MESFETs). Comparable DC and RF performances were achieved for MESFETs with and without oxygen implants; however, MESFETs with the extra oxygen-implantation demonstrated good breakdown performance, less frequency dispersion of drain current, and good time dependence of drain current at 150°C in air.",

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T1 - GaAs metal-semiconductor field-effect transistor with surface oxygen implantation

AU - Hsin, Y. M.

AU - Hsueh, K. P.

AU - Hsu, C. J.

AU - Wu, L. W.

PY - 2001/10/15

Y1 - 2001/10/15

N2 - Oxygen implantation has been employed to form a high-resistance region between the channel and the surface of GaAs metal-semiconductor field-effect transistors (MESFETs). Comparable DC and RF performances were achieved for MESFETs with and without oxygen implants; however, MESFETs with the extra oxygen-implantation demonstrated good breakdown performance, less frequency dispersion of drain current, and good time dependence of drain current at 150°C in air.

AB - Oxygen implantation has been employed to form a high-resistance region between the channel and the surface of GaAs metal-semiconductor field-effect transistors (MESFETs). Comparable DC and RF performances were achieved for MESFETs with and without oxygen implants; however, MESFETs with the extra oxygen-implantation demonstrated good breakdown performance, less frequency dispersion of drain current, and good time dependence of drain current at 150°C in air.

KW - GaAs

KW - Ion implantation

KW - MESFET

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U2 - 10.1143/jjap.40.l1084

DO - 10.1143/jjap.40.l1084

M3 - 通訊期刊論文

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SN - 0021-4922

VL - 40

SP - L1084-L1085

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 10 B

ER -

GaAs metal-semiconductor field-effect transistor with surface oxygen implantation

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