GaAs metal-semiconductor field-effect transistor with extremely low resistance nonalloyed ohmic contacts using an InAs/GaAs superlattice

N. S. Kumar, J. I. Chyi, C. K. Peng, H. Morkoç

研究成果: 雜誌貢獻期刊論文同行評審

11 引文 斯高帕斯(Scopus)

摘要

GaAs metal-semiconductor field-effect transistors (MESFETs) with extremely low resistance nonalloyed ohmic contacts have been demonstrated. The contact structure consists of an n+-InAs/GaAs strained-layer superlattice and an InAs cap layer. Contact resistances as low as 0.036 Ω mm have been measured. These results represent the smallest figures reported to date for GaAs field-effect transistors. Nonalloyed MESFETs with 1 μm gate lengths had transconductances of about 210 mS/mm.

原文???core.languages.en_GB???
頁(從 - 到)775-776
頁數2
期刊Applied Physics Letters
55
發行號8
DOIs
出版狀態已出版 - 1989

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