GaAs-based transverse junction superluminescent diodes with strain-compensated InGaAs-GaAsP multiple-quantum-wells at 1.1-μm wavelength

Shi Hao Guol; Ming Ge Chou; Ying Jay Yang; Chi Kuang Sun; Jin Wei Shi

doi:10.1109/LPT.2010.2047637

GaAs-based transverse junction superluminescent diodes with strain-compensated InGaAs-GaAsP multiple-quantum-wells at 1.1-μm wavelength

Shi Hao Guol, Ming Ge Chou, Ying Jay Yang, Chi Kuang Sun, Jin Wei Shi

電機工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

3 引文斯高帕斯（Scopus）

摘要

In this study, we demonstrate a transverse junction superluminescent diode (TJ-SLD) with an engagement of chirped In _xGa $ _{1 - x}AsGaAs _0.9P _0.1 strain-compensated multiple-quantum-wells (SC MQWs) at 1.1-μm wavelength. The problem relative to inhomogeneous carrier distribution in each QW, which is a problem in traditional vertical junction SLDs (VJ-SLDs), can be effectively minimized by utilizing the benefit of lateral carrier injection in TJ devices. Our demonstrated device offers significant improvements in threshold current, output power, and optical bandwidths compared to TJ-SLD without SC MQWs. Furthermore, compared with the high-performance ∼1-μm VJ-SLDs, this novel device exhibits a comparable output power and 3-dB bandwidth performance with a more stable electroluminescence spectrum, which varies only negligibly under a wide range of bias current.

原文	???core.languages.en_GB???
文章編號	5447643
頁（從 - 到）	917-919
頁數	3
期刊	IEEE Photonics Technology Letters
卷	22
發行號	12
DOIs	https://doi.org/10.1109/LPT.2010.2047637
出版狀態	已出版 - 2010

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10.1109/LPT.2010.2047637

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@article{fb4eae42419440e1be20ff4721a2781d,

title = "GaAs-based transverse junction superluminescent diodes with strain-compensated InGaAs-GaAsP multiple-quantum-wells at 1.1-μm wavelength",

abstract = "In this study, we demonstrate a transverse junction superluminescent diode (TJ-SLD) with an engagement of chirped In xGa $ 1 - xAsGaAs 0.9P 0.1 strain-compensated multiple-quantum-wells (SC MQWs) at 1.1-μm wavelength. The problem relative to inhomogeneous carrier distribution in each QW, which is a problem in traditional vertical junction SLDs (VJ-SLDs), can be effectively minimized by utilizing the benefit of lateral carrier injection in TJ devices. Our demonstrated device offers significant improvements in threshold current, output power, and optical bandwidths compared to TJ-SLD without SC MQWs. Furthermore, compared with the high-performance ∼1-μm VJ-SLDs, this novel device exhibits a comparable output power and 3-dB bandwidth performance with a more stable electroluminescence spectrum, which varies only negligibly under a wide range of bias current.",

keywords = "Amplified spontaneous emission (ASE), Strain compensation, Superluminescent diodes (SLDs)",

author = "Guol, {Shi Hao} and Chou, {Ming Ge} and Yang, {Ying Jay} and Sun, {Chi Kuang} and Shi, {Jin Wei}",

note = "Funding Information: Manuscript received December 30, 2009; revised March 16, 2010; accepted March 28, 2010. Date of publication April 15, 2010; date of current version June 03, 2010. This work was supported by the National Science Council of Taiwan under Grant NSC-96-2221-E-008-106-MY3 and Grant NSC-98-2120-M-002-001.",

year = "2010",

doi = "10.1109/LPT.2010.2047637",

language = "???core.languages.en_GB???",

volume = "22",

pages = "917--919",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

number = "12",

}

TY - JOUR

T1 - GaAs-based transverse junction superluminescent diodes with strain-compensated InGaAs-GaAsP multiple-quantum-wells at 1.1-μm wavelength

AU - Guol, Shi Hao

AU - Chou, Ming Ge

AU - Yang, Ying Jay

AU - Sun, Chi Kuang

AU - Shi, Jin Wei

N1 - Funding Information: Manuscript received December 30, 2009; revised March 16, 2010; accepted March 28, 2010. Date of publication April 15, 2010; date of current version June 03, 2010. This work was supported by the National Science Council of Taiwan under Grant NSC-96-2221-E-008-106-MY3 and Grant NSC-98-2120-M-002-001.

PY - 2010

Y1 - 2010

N2 - In this study, we demonstrate a transverse junction superluminescent diode (TJ-SLD) with an engagement of chirped In xGa $ 1 - xAsGaAs 0.9P 0.1 strain-compensated multiple-quantum-wells (SC MQWs) at 1.1-μm wavelength. The problem relative to inhomogeneous carrier distribution in each QW, which is a problem in traditional vertical junction SLDs (VJ-SLDs), can be effectively minimized by utilizing the benefit of lateral carrier injection in TJ devices. Our demonstrated device offers significant improvements in threshold current, output power, and optical bandwidths compared to TJ-SLD without SC MQWs. Furthermore, compared with the high-performance ∼1-μm VJ-SLDs, this novel device exhibits a comparable output power and 3-dB bandwidth performance with a more stable electroluminescence spectrum, which varies only negligibly under a wide range of bias current.

AB - In this study, we demonstrate a transverse junction superluminescent diode (TJ-SLD) with an engagement of chirped In xGa $ 1 - xAsGaAs 0.9P 0.1 strain-compensated multiple-quantum-wells (SC MQWs) at 1.1-μm wavelength. The problem relative to inhomogeneous carrier distribution in each QW, which is a problem in traditional vertical junction SLDs (VJ-SLDs), can be effectively minimized by utilizing the benefit of lateral carrier injection in TJ devices. Our demonstrated device offers significant improvements in threshold current, output power, and optical bandwidths compared to TJ-SLD without SC MQWs. Furthermore, compared with the high-performance ∼1-μm VJ-SLDs, this novel device exhibits a comparable output power and 3-dB bandwidth performance with a more stable electroluminescence spectrum, which varies only negligibly under a wide range of bias current.

KW - Amplified spontaneous emission (ASE)

KW - Strain compensation

KW - Superluminescent diodes (SLDs)

UR - http://www.scopus.com/inward/record.url?scp=77953091836&partnerID=8YFLogxK

U2 - 10.1109/LPT.2010.2047637

DO - 10.1109/LPT.2010.2047637

M3 - 期刊論文

AN - SCOPUS:77953091836

SN - 1041-1135

VL - 22

SP - 917

EP - 919

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 12

M1 - 5447643

ER -

GaAs-based transverse junction superluminescent diodes with strain-compensated InGaAs-GaAsP multiple-quantum-wells at 1.1-μm wavelength

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