GaAs-based long-wavelength traveling-wave photodetector

Jin Wei Shi, Chi Kuang Sun, Ying Jay Yang, Yi Jen Chiu, John E. Bowers

研究成果: 雜誌貢獻會議論文同行評審


GaAs-based high-speed photodetectors attract lots of attention in the past twenty years due to their maturity in material growth and processing. However their wide bandgap characteristic (830 nm) restricts their applications in fiber communication wavelength (1.3 μm to approximately 1.55 μm). Recently some research groups had demonstrated GaAs-based n-i-n, p-i-n waveguide type photodetectors operating at 1.55 μm by taking advantage of the mid-gap defect absorption of low-temperature grown GaAs (LTG-GaAs). In this paper we propose and analyze different bandwidth-limiting factors for LTG-GaAs based metal-semiconductor-metal traveling wave photodetector (MSM TWPD) for both long and short wavelength cases. According to our calculation results, MSM TWPDs release the bandwidth limitation bottleneck in previous n-i-n and p-i-n TWPD structures, especially in the long wavelength case. Our analysis indicates that LT-GaAs based traveling-wave photodetectors can offer excellent bandwidth as well as high saturation power performances in fiber communication wavelength, which corresponds to long absorption length regime.

頁(從 - 到)551-558
期刊Proceedings of SPIE - The International Society for Optical Engineering
出版狀態已出版 - 2000
事件Optoelectronic Materials and Devices II - Taipei, Taiwan
持續時間: 26 7月 200028 7月 2000


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