Fusion bonding of copper and silicon at -70 °C by electrochemistry

Keyphrases

• Atomic Interdiffusion 33%
• Bonding Interface 100%
• Bonding Strength 33%
• Copper Atom 33%
• Copper Layer 33%
• Copper Surface 33%
• Cryo 33%
• Cu Atoms 33%
• Cu-Si 66%
• Dangling Bonds 33%
• Dry Ice 33%
• Electric Field (E-field) 33%
• Electrical Energy 33%
• Electrochemical Processing 33%
• Extremely Low Temperature 33%
• Fusion Bonding 100%
• High Temperature 33%
• Host Substrate 33%
• Interdiffusion 66%
• Liquid Nitrogen 33%
• Mass Spectrometry Analysis 33%
• Possible Mechanisms 33%
• Razor 33%
• Secondary Ion Mass Spectrometry 33%
• Semiconductor Process 33%
• Silicon Atom 33%
• Surface Activation 33%
• Thermal Energy 100%
• Wafer Bonding 33%
• Wafer Bonding Process 33%

Engineering

• Bonding Process 33%
• Bonding Strength 33%
• Dangling Bond 33%
• Electric Field 33%
• Electrical Energy 33%
• Interdiffusion 100%
• Low-Temperature 33%
• Nanoscale 33%
• Silicon Atom 33%
• Surface Activation 33%
• Thermal Energy 100%
• Wafer Bonding 66%

Material Science

• Mass Spectrometry 16%
• Secondary Ion Mass Spectrometry 16%
• Silicon 100%
• Surface (Surface Science) 66%