Fundamental issues in wafer bonding

U. Gösele, Y. Bluhm, G. Kästner, P. Kopperschmidt, G. Kräuter, R. Scholz, A. Schumacher, St Senz, Q. Y. Tong, L. J. Huang, Y. L. Chao, T. H. Lee

研究成果: 雜誌貢獻期刊論文同行評審

68 引文 斯高帕斯(Scopus)

摘要

Semiconductor wafer bonding has increasingly become a technology of choice for materials integration in microelectronics, optoelectronics, and microelectromechanical systems. The present overview concentrates on some basic issues associated with wafer bonding such as the reactions at the bonding interface during hydrophobic and hydrophilic wafer bonding, as well as during ultrahigh vacuum bonding. Mechanisms of hydrogen-implantation induced layer splitting ("smart-cut" and "smarter-cut" approaches) are also considered. Finally, recent developments in the area of so-called "compliant universal substrates" based on twist wafer bonding are discussed.

原文???core.languages.en_GB???
頁(從 - 到)1145-1152
頁數8
期刊Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
17
發行號4
DOIs
出版狀態已出版 - 1999

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