Fully Solution-Processed Low-Voltage Driven Transparent Oxide Thin Film Transistors

Bo Xuan Yang, Yu Hsin Chang Chien, Ting Chang, Ching Han Liao, Cheng Yi Liu, Anthony Shiaw Tseh Chiang, Cheng Liang Liu

研究成果: 雜誌貢獻期刊論文同行評審

5 引文 斯高帕斯(Scopus)

摘要

In this work, transparent ZnO thin-film transistors (TFTs) are fabricated on ITO glass substrate with only solution processes. The active ZnO channels are deposited by spray pyrolysis. The gate dielectric is a spin-coated high dielectric constant (k) titanium-silicon oxide (TSO) layer, while the source/drain (S/D) electrodes are patterned by two-step spray-printing of silver nanowire (AgNWs)/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) transparent conductive composite through a shadow mask. The composition and microstructural characteristics of the films, as well as their TFTs performance, are systematically studied as a function of the temperature. The introduction of TSO high k dielectric, with ultraviolet (UV)-assisted post-annealing, significantly improves the device performance and achieves a maximum electron mobility (µmax) value as high as 56.2 cm2 V−1 s−1 when measured with thermally-evaporated Al top electrode. For fully solution-processed transparent TFTs with low temperature fabricated AgNWs/PEDOT:PSS S/D electrodes, the µmax is calculated to be 9.1 cm2 V−1 s−1 operating at a relatively low voltage of <3 V. The TFTs also show hysteresis-free electrical characteristics and optical transparency of ≈80% in the visible region of the optical spectrum.

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文章編號1800192
期刊Physica Status Solidi (A) Applications and Materials Science
215
發行號24
DOIs
出版狀態已出版 - 19 12月 2018

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