FTO films deposited in transition and oxide modes by magnetron sputtering using tin metal target

Bo Huei Liao; Shih Hao Chan; Cheng Chung Lee; Chien Cheng Kuo; Sheng Hui Chen; Donyau Chiang

doi:10.1364/AO.53.00A148

FTO films deposited in transition and oxide modes by magnetron sputtering using tin metal target

Bo Huei Liao, Shih Hao Chan, Cheng Chung Lee, Chien Cheng Kuo, Sheng Hui Chen, Donyau Chiang

光電科學與工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

8 引文斯高帕斯（Scopus）

摘要

Fluorine-doped tin oxide (FTO) films were prepared by pulsed DC magnetron sputtering with a metal Sn target. Two different modes were applied to deposit the FTO films, and their respective optical and electrical properties were evaluated. In the transition mode, the minimum resistivity of the FTO film was 1.63 × 10^-3Ωcm with average transmittance of 80.0% in the visible region. Furthermore, FTO films deposited in the oxide mode and mixed simultaneously with H₂could achieve even lower resistivity to 8.42 × 10^-4Ωcm and higher average transmittance up to 81.1% in the visible region.

原文	???core.languages.en_GB???
頁（從 - 到）	A148-A153
期刊	Applied Optics
發行號	4
DOIs	https://doi.org/10.1364/AO.53.00A148
出版狀態	已出版 - 1 2月 2014

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10.1364/AO.53.00A148

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@article{4368a74ba73c4f95b7ade440ecebebcb,

title = "FTO films deposited in transition and oxide modes by magnetron sputtering using tin metal target",

abstract = "Fluorine-doped tin oxide (FTO) films were prepared by pulsed DC magnetron sputtering with a metal Sn target. Two different modes were applied to deposit the FTO films, and their respective optical and electrical properties were evaluated. In the transition mode, the minimum resistivity of the FTO film was 1.63 × 10-3Ωcm with average transmittance of 80.0% in the visible region. Furthermore, FTO films deposited in the oxide mode and mixed simultaneously with H2could achieve even lower resistivity to 8.42 × 10-4Ωcm and higher average transmittance up to 81.1% in the visible region.",

author = "Liao, {Bo Huei} and Chan, {Shih Hao} and Lee, {Cheng Chung} and Kuo, {Chien Cheng} and Chen, {Sheng Hui} and Donyau Chiang",

note = "Publisher Copyright: {\textcopyright} 2013 Optical Society of America.",

year = "2014",

month = feb,

day = "1",

doi = "10.1364/AO.53.00A148",

language = "???core.languages.en_GB???",

pages = "A148--A153",

journal = "Applied Optics",

issn = "1559-128X",

number = "4",

}

TY - JOUR

T1 - FTO films deposited in transition and oxide modes by magnetron sputtering using tin metal target

AU - Liao, Bo Huei

AU - Chan, Shih Hao

AU - Lee, Cheng Chung

AU - Kuo, Chien Cheng

AU - Chen, Sheng Hui

AU - Chiang, Donyau

PY - 2014/2/1

Y1 - 2014/2/1

N2 - Fluorine-doped tin oxide (FTO) films were prepared by pulsed DC magnetron sputtering with a metal Sn target. Two different modes were applied to deposit the FTO films, and their respective optical and electrical properties were evaluated. In the transition mode, the minimum resistivity of the FTO film was 1.63 × 10-3Ωcm with average transmittance of 80.0% in the visible region. Furthermore, FTO films deposited in the oxide mode and mixed simultaneously with H2could achieve even lower resistivity to 8.42 × 10-4Ωcm and higher average transmittance up to 81.1% in the visible region.

AB - Fluorine-doped tin oxide (FTO) films were prepared by pulsed DC magnetron sputtering with a metal Sn target. Two different modes were applied to deposit the FTO films, and their respective optical and electrical properties were evaluated. In the transition mode, the minimum resistivity of the FTO film was 1.63 × 10-3Ωcm with average transmittance of 80.0% in the visible region. Furthermore, FTO films deposited in the oxide mode and mixed simultaneously with H2could achieve even lower resistivity to 8.42 × 10-4Ωcm and higher average transmittance up to 81.1% in the visible region.

UR - http://www.scopus.com/inward/record.url?scp=84942373888&partnerID=8YFLogxK

U2 - 10.1364/AO.53.00A148

DO - 10.1364/AO.53.00A148

M3 - 期刊論文

AN - SCOPUS:84942373888

SN - 1559-128X

SP - A148-A153

JO - Applied Optics

JF - Applied Optics

IS - 4

ER -

FTO films deposited in transition and oxide modes by magnetron sputtering using tin metal target

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