@article{42c279d5fb3c4a11b790aab71c7a129e,
title = "Four-Bits-Per-Memory One-Transistor-and-Eight-Resistive-Random-Access-Memory (1T8R) Array",
abstract = "We demonstrate a 1MBit array of 1-Transistor-8-Resistive RAM (1T8R) memory fabricated using a foundry logic technology. Using a gradual SET/RESET programming scheme, sixteen conductance levels are stored in each RRAM, achieving 1T8R array with 4 bits per RRAM. We report SET/RESET endurance of 100K cycles and 10-year retention at 110°C.",
keywords = "1T8R, 4-bits-per-RRAM, RRAM, gradual-SET/RESET",
author = "Hsieh, {E. R.} and X. Zheng and Le, {B. Q.} and Shih, {Y. C.} and Radway, {R. M.} and M. Nelson and S. Mitra and S. Wong",
note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",
year = "2021",
month = mar,
doi = "10.1109/LED.2021.3055017",
language = "???core.languages.en_GB???",
volume = "42",
pages = "335--338",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
number = "3",
}