Forward turn-on and reverse blocking characteristics of GaN Schottky and p-i-n rectifiers

A. P. Zhang, G. Dang, F. Ren, J. Han, H. Cho, S. J. Pearton, J. I. Chyi, T. E. Nee, C. M. Lee, C. C. Chuo, S. N.G. Chu

研究成果: 雜誌貢獻期刊論文同行評審

18 引文 斯高帕斯(Scopus)

摘要

High voltage GaN Schottky and p-i-n rectifiers have been fabricated on heteroepitaxial layers. The Schottky diodes have reverse blocking voltages around 500 V for vertical devices employing undoped, conducting GaN, whereas these voltages are >3000 V for lateral devices employing resistive GaN. The forward turn-on voltages are ≥3.5 V for the Schottky rectifiers, with ideality factors of 1.5-2. The dominant current transport mechanism is Shockley-Read-Hall recombination. The p-i-n rectifiers fabricated with conducting i layers also have reverse blocking voltages of approximately 500 V, but the forward turn-on voltages are typically approximately 5 V. A comparison with the state-of-the-art SiC Schottky and p-i-n rectifiers is also given.

原文???core.languages.en_GB???
頁(從 - 到)1157-1161
頁數5
期刊Solid-State Electronics
44
發行號7
DOIs
出版狀態已出版 - 1 7月 2000

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