@article{1776f64a677343869e603a9104f8ae71,
title = "Forward turn-on and reverse blocking characteristics of GaN Schottky and p-i-n rectifiers",
abstract = "High voltage GaN Schottky and p-i-n rectifiers have been fabricated on heteroepitaxial layers. The Schottky diodes have reverse blocking voltages around 500 V for vertical devices employing undoped, conducting GaN, whereas these voltages are >3000 V for lateral devices employing resistive GaN. The forward turn-on voltages are ≥3.5 V for the Schottky rectifiers, with ideality factors of 1.5-2. The dominant current transport mechanism is Shockley-Read-Hall recombination. The p-i-n rectifiers fabricated with conducting i layers also have reverse blocking voltages of approximately 500 V, but the forward turn-on voltages are typically approximately 5 V. A comparison with the state-of-the-art SiC Schottky and p-i-n rectifiers is also given.",
author = "Zhang, {A. P.} and G. Dang and F. Ren and J. Han and H. Cho and Pearton, {S. J.} and Chyi, {J. I.} and Nee, {T. E.} and Lee, {C. M.} and Chuo, {C. C.} and Chu, {S. N.G.}",
note = "Funding Information: The work at UF is partially supported by a DARPA/EPRI grant (D. Radack/J. Melcher), MDA 972-98-1-006, monitored by ONR (J.C. Zolper) and by NSF-DMR 97-32865. The work of NCU is sponsored by the National Science Council of ROC under contract NSC-88-2215E-008-012. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed-Martin company, for the US Department of Energy under grant DEAC 04-94-AL85000. ",
year = "2000",
month = jul,
day = "1",
doi = "10.1016/S0038-1101(00)00059-9",
language = "???core.languages.en_GB???",
volume = "44",
pages = "1157--1161",
journal = "Solid-State Electronics",
issn = "0038-1101",
number = "7",
}