Forming a photoluminescent layer on another surface in the dark through lasering of N-type silicon in an electrolyte

Heng Chun Tai, Chao Ching Chiang, Benjamin Tien Hsi Lee

研究成果: 雜誌貢獻期刊論文同行評審

3 引文 斯高帕斯(Scopus)

摘要

Photoetching of n-type silicon induces a photoluminescent (PL) layer containing nanocrystals on the irradiated surface, usually through band gap absorption (wavelength <1100 nm). Here, we demonstrate the formation of a PL layer restricted to the backside surface, not the irradiated surface, by using a 1064 nm Nd:YAG laser. A nanoscale structure of the PL layer is achieved by merely modifying the electrolyte concentration without adding oxidants. To illustrate the working principle, we submit the hypothesis of a quasi-pn structure based on the theory of a quasi-Fermi level. Because of the "injection current"effect due to the quasi-pn structure, the hole current promoted by free-carrier absorption flows toward the backside surface, leading to anodization. This result is remarkable because anodization of n-type silicon is very hard to achieve with just an etchant in the dark.

原文???core.languages.en_GB???
頁(從 - 到)26497-26503
頁數7
期刊ACS Omega
5
發行號41
DOIs
出版狀態已出版 - 20 10月 2020

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