The effects of stress on the formation of TiSi2 thin films have been investigated. Compressive stress present in the silicon substrate was found to retard significantly the transformation of high-resistivity C49-TiSi2 to low-resistivity C54-TiSi2. On the other hand, the tensile stress present in the silicon substrate was found to promote the formation of C54-TiSi2. For Ti on stressed (001)Si substrates after rapid thermal annealing (RTA), the thickness of TiSi2 films was found to decrease and increase with the compressive and tensile stress level, respectively. In addition, the thickness of amorphous interlayers (a-interlayers) between Ti films and silicon substrates was found to be thicker and thinner in the compressively and tensile-stressed samples, respectively. The results indicated that the compressive stress hinders the migration of Si through the Ti/Si interface, so that the transformation of C49- to C54-TiSi2 is retarded. In contrast, the tensile stress promotes the Si diffusion to facilitate the formation of C54-TiSi2.
|頁（從 - 到）||295-299|
|期刊||Applied Surface Science|
|出版狀態||已出版 - 4月 1999|
|事件||Proceedings of the 1998 9th International Conference on Solid Films and Surfaces, ICSFS-9 - Copenhagen, Denmark|
持續時間: 6 7月 1998 → 10 7月 1998