Formation of TiSi2 thin films on stressed (001)Si substrates

S. L. Cheng; H. Y. Huang; Y. C. Peng; L. J. Chen; B. Y. Tsui; C. J. Tsai; S. S. Guo; Y. R. Yang; J. T. Lin

doi:10.1016/S0169-4332(98)00733-8

Formation of TiSi₂ thin films on stressed (001)Si substrates

S. L. Cheng, H. Y. Huang, Y. C. Peng, L. J. Chen, B. Y. Tsui, C. J. Tsai, S. S. Guo, Y. R. Yang, J. T. Lin

化學工程與材料工程學系

研究成果: 雜誌貢獻 › 會議論文 › 同行評審

5 引文斯高帕斯（Scopus）

摘要

The effects of stress on the formation of TiSi₂ thin films have been investigated. Compressive stress present in the silicon substrate was found to retard significantly the transformation of high-resistivity C49-TiSi₂ to low-resistivity C54-TiSi₂. On the other hand, the tensile stress present in the silicon substrate was found to promote the formation of C54-TiSi₂. For Ti on stressed (001)Si substrates after rapid thermal annealing (RTA), the thickness of TiSi₂ films was found to decrease and increase with the compressive and tensile stress level, respectively. In addition, the thickness of amorphous interlayers (a-interlayers) between Ti films and silicon substrates was found to be thicker and thinner in the compressively and tensile-stressed samples, respectively. The results indicated that the compressive stress hinders the migration of Si through the Ti/Si interface, so that the transformation of C49- to C54-TiSi₂ is retarded. In contrast, the tensile stress promotes the Si diffusion to facilitate the formation of C54-TiSi₂.

原文	???core.languages.en_GB???
頁（從 - 到）	295-299
頁數	5
期刊	Applied Surface Science
卷	142
發行號	1
DOIs	https://doi.org/10.1016/S0169-4332(98)00733-8
出版狀態	已出版 - 4月 1999
事件	Proceedings of the 1998 9th International Conference on Solid Films and Surfaces, ICSFS-9 - Copenhagen, Denmark 持續時間: 6 7月 1998 → 10 7月 1998

存取文件

10.1016/S0169-4332(98)00733-8

引用此

@article{1c3f94ae87ce4e09bdcb6f7bc536b453,

title = "Formation of TiSi2 thin films on stressed (001)Si substrates",

abstract = "The effects of stress on the formation of TiSi2 thin films have been investigated. Compressive stress present in the silicon substrate was found to retard significantly the transformation of high-resistivity C49-TiSi2 to low-resistivity C54-TiSi2. On the other hand, the tensile stress present in the silicon substrate was found to promote the formation of C54-TiSi2. For Ti on stressed (001)Si substrates after rapid thermal annealing (RTA), the thickness of TiSi2 films was found to decrease and increase with the compressive and tensile stress level, respectively. In addition, the thickness of amorphous interlayers (a-interlayers) between Ti films and silicon substrates was found to be thicker and thinner in the compressively and tensile-stressed samples, respectively. The results indicated that the compressive stress hinders the migration of Si through the Ti/Si interface, so that the transformation of C49- to C54-TiSi2 is retarded. In contrast, the tensile stress promotes the Si diffusion to facilitate the formation of C54-TiSi2.",

author = "Cheng, {S. L.} and Huang, {H. Y.} and Peng, {Y. C.} and Chen, {L. J.} and Tsui, {B. Y.} and Tsai, {C. J.} and Guo, {S. S.} and Yang, {Y. R.} and Lin, {J. T.}",

note = "Funding Information: The research was supported by the National Science Council through a grant No. NSC86-2215-E007-015 and Electronics Research and Service Organization, ITRI.; Proceedings of the 1998 9th International Conference on Solid Films and Surfaces, ICSFS-9 ; Conference date: 06-07-1998 Through 10-07-1998",

year = "1999",

month = apr,

doi = "10.1016/S0169-4332(98)00733-8",

language = "???core.languages.en_GB???",

volume = "142",

pages = "295--299",

journal = "Applied Surface Science",

issn = "0169-4332",

number = "1",

}

TY - JOUR

T1 - Formation of TiSi2 thin films on stressed (001)Si substrates

AU - Cheng, S. L.

AU - Huang, H. Y.

AU - Peng, Y. C.

AU - Chen, L. J.

AU - Tsui, B. Y.

AU - Tsai, C. J.

AU - Guo, S. S.

AU - Yang, Y. R.

AU - Lin, J. T.

N1 - Funding Information: The research was supported by the National Science Council through a grant No. NSC86-2215-E007-015 and Electronics Research and Service Organization, ITRI.

PY - 1999/4

Y1 - 1999/4

N2 - The effects of stress on the formation of TiSi2 thin films have been investigated. Compressive stress present in the silicon substrate was found to retard significantly the transformation of high-resistivity C49-TiSi2 to low-resistivity C54-TiSi2. On the other hand, the tensile stress present in the silicon substrate was found to promote the formation of C54-TiSi2. For Ti on stressed (001)Si substrates after rapid thermal annealing (RTA), the thickness of TiSi2 films was found to decrease and increase with the compressive and tensile stress level, respectively. In addition, the thickness of amorphous interlayers (a-interlayers) between Ti films and silicon substrates was found to be thicker and thinner in the compressively and tensile-stressed samples, respectively. The results indicated that the compressive stress hinders the migration of Si through the Ti/Si interface, so that the transformation of C49- to C54-TiSi2 is retarded. In contrast, the tensile stress promotes the Si diffusion to facilitate the formation of C54-TiSi2.

AB - The effects of stress on the formation of TiSi2 thin films have been investigated. Compressive stress present in the silicon substrate was found to retard significantly the transformation of high-resistivity C49-TiSi2 to low-resistivity C54-TiSi2. On the other hand, the tensile stress present in the silicon substrate was found to promote the formation of C54-TiSi2. For Ti on stressed (001)Si substrates after rapid thermal annealing (RTA), the thickness of TiSi2 films was found to decrease and increase with the compressive and tensile stress level, respectively. In addition, the thickness of amorphous interlayers (a-interlayers) between Ti films and silicon substrates was found to be thicker and thinner in the compressively and tensile-stressed samples, respectively. The results indicated that the compressive stress hinders the migration of Si through the Ti/Si interface, so that the transformation of C49- to C54-TiSi2 is retarded. In contrast, the tensile stress promotes the Si diffusion to facilitate the formation of C54-TiSi2.

UR - http://www.scopus.com/inward/record.url?scp=0032628449&partnerID=8YFLogxK

U2 - 10.1016/S0169-4332(98)00733-8

DO - 10.1016/S0169-4332(98)00733-8

M3 - 會議論文

AN - SCOPUS:0032628449

SN - 0169-4332

VL - 142

SP - 295

EP - 299

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1

T2 - Proceedings of the 1998 9th International Conference on Solid Films and Surfaces, ICSFS-9

Y2 - 6 July 1998 through 10 July 1998

ER -

Formation of TiSi2 thin films on stressed (001)Si substrates

摘要

存取文件

指紋

引用此

Formation of TiSi₂ thin films on stressed (001)Si substrates