@inproceedings{87bda6e6ffe64743a481a91ccd0ae88d,
title = "Formation of SiGe Nanorod arrays by combining nanoshpere lithography and Au-assisted chemical etching",
abstract = "SiGe Nanorod (NR) arrays have been fabricated by combining nanosphere lithography and Au-assisted chemical etching. With controlling the etching rate and duration, the length of SiGe NRs can be tuned from 300 nm to 1μnm. The morphology of SiGe NRs dramatically changed at different operating temperature. The results show a strong temperature dependence on fabrication of SiGe NRs. With TEM and SEM analysis, this work provides an effective approach to design the low-dimensional SiGe-based nanostructures for possible applications",
author = "Lai, {C. H.} and Lee, {Y. J.} and Yeh, {P. H.} and Lee, {S. W.}",
year = "2011",
doi = "10.1109/INEC.2011.5991752",
language = "???core.languages.en_GB???",
isbn = "9781457703799",
series = "Proceedings - International NanoElectronics Conference, INEC",
booktitle = "4th IEEE International NanoElectronics Conference, INEC 2011",
note = "4th IEEE International Nanoelectronics Conference, INEC 2011 ; Conference date: 21-06-2011 Through 24-06-2011",
}